Details, datasheet, quote on part number: 189NQSeries
Part189NQSeries
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => >100 Amp
Title>100 Amp
Description180 Amp Schottky Rectifier
CompanyInternational Rectifier Corp.
DatasheetDownload 189NQSeries datasheet
  

 

Features, Applications

IF(AV) Rectangular waveform VRRM range IFSM 5 s sine 180Apk, TJ=125C range

C The 189NQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. C TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5's Easier to mount and lower profile than DO-5's High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability

Outline HALF PAK Module Dimensions in millimeters and inches
VR Max. DC Reverse Voltage (V) 135 150 VRWM Max. Working Peak Reverse Voltage (V)

IF(AV) Max. Average Forward Current * See Fig. 5 I FSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 EAS IA R Non-Repetitive Avalanche Energy Repetitive Avalanche Current

50% duty cycle 110 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied

= 25 C, IAS= 1 Amps, 30 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. x VR typical

Max. Reverse Leakage Current (1) * See Fig. 2 Max. Junction Capacitance Typical Series Inductance
= 5VDC, (test signal range 25 C From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change (Rated VR)
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range

RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Terminal Torque Case Style Min. Max. Min. Max.

Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics

 

Some Part number from the same manufacture International Rectifier Corp.
18TQ Schottky Rectifier 18 Amp
18TQ035 35V 18A Schottky Discrete Diode in a TO-220AC Package
19MT050XF 500V Single N-channel HexFET Power MOSFET in a MTP Package
19TQ015 15V 19A Schottky Discrete Diode in a TO-220AC Package
1B005-1B10 1a Single Phase D.i.l. Rectifier Bridge
1BQ20 20V 1A Schottky Bridge Diode in a D-70 (Bridge) Package
1BQSeries 1a Single Phase D.i.l. Schottky Bridge
1KAB-E 1.2 Amp Rectifier Bridge
1KAB05E 50V Bridge in a D-38 Package
1KAB100E 1000V Bridge in a D-38 Package
1KAB20E 50V Bridge in a D-38 Package
1N1183 50V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
1N1199A 50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1N1200A 100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1N1204A 50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1N1205A 100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1N2054 50V 250A Std. Recovery Diode in a DO-205AB (DO-9)package
1N2128A 50V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
1N2129A 100V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
1N2130A 50V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
1N2133A 100V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
Same catergory

10TQ : 5 to 100 Amp. Schottky Rectifier 10 Amp. IF(AV) Rectangular waveform VRRM IFSM 5 s sine @ 10 Apk, = 125C range V C A The 10TQ. Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling.

1N4448WS : Small Signal Switching Diodes.

KBU400 : Discrete, Diodes, Bridges. Mechanical Data: Weight - 0.3 Ounces. Mounting Torque 5.1 lbs. Mounting Position - Any. n COMPACT SIZE n LOW LEAKAGE CURRENT n 200 AMP SURGE OVERLOAD RATING n MEETS UL 94V-0 Electrical Characteristics @ 25oC. Maximum Ratings Peak Repetitive Reverse VoltageVRRM RMS Reverse VoltageVR(rms) DC Blocking VoltageVDC Average Forward Rectified CurrentIF(av).

MC1413 : High Voltage. High Voltage, High Current Darlington Transistor Arrays.

PTF10107 : 5 Watts, 2.0 GHZ Goldmos Field Effect Transistor. The PTF a 5watt GOLDMOS FET intended for large signal applications from to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Guaranteed Performance at 1.99 GHz, V - Output Power = 5 Watts Min - Power Gain 11 dB Min Full Gold Metallization.

SFP9520 : 100V P-channel A-FET / Substitute of IRF9520. n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 A (Max.) @ VDS -100V n Low RDS(ON) : 0.444 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.

UPA1814 : P-channel MOS Field Effect Transistor For Switching. The is a switching device which can be driven directly 4 V power source. The PA1814 a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 5 Can be driven 4 V power source Low on-state resistance 16 m MAX. (VGS 24 m MAX. (VGS 27 m MAX. (VGS = 3.5 A) Built-in.

VBO160-08NO7 : 800V Single Phase Rectifier Bridge. Test Conditions = 100C, module = 35C (RthCA = 0.2 K/W), module TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage 1800 V Low forward voltage drop UL applied.

0803-6500-20 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

NTD568 : 7 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

SML250SRZ06ESE3 : 250 A, 600 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA SOFT RECOVERY ; IF: 250000 mA ; RoHS Compliant: RoHS ; Package: E34, MODULE-7 ; Pin Count: 7 ; Number of Diodes: 2.

Y1506 : RESISTOR, METAL FOIL, 0.3 W, 0.005; 0.01; 0.05; 0.1; 0.5; 1 %, 2 ppm, 30.1 ohm - 121000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Metal Foil ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Operating DC Voltage: 300 volts ; Operating Temperature: 125 to 175 C (257 to 347 F).

104PPA202KD20 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2000 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 2000 volts ; Mounting.

1R0M50V4X5 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 1 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 0.1000 microamps ; ESR: 166000 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40.

7447913 : 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.3300 microH ; Rated DC Current: 250 milliamps ; Operating.

 
0-C     D-L     M-R     S-Z