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Part: 20CTH03
Category:
Description: 300V 20A Hyperfast Discrete Diode in a TO-220AB Package
Company: International Rectifier Corp.
Datasheet: Download 20CTH03 datasheet File size : 267 kB
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Datasheet text preview:
Bulletin PD-20769 rev. A 08/03
20CTH03 20CTH03S 20CTH03-1 20CTH03FP
Hyperfast Rectifier
Features
· · · · Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
trr = 35ns max. IF(AV) = 20Amp VR = 300V
Description/ Applications International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and Hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
VR R M IF(AV) Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 135°C (FULLPACK) IFSM TJ, TSTG Non Repetitive Peak Surge Current @ TJ = 25°C Operating Junction and Storage Temperatures @ TC = 160°C Per Diode Per Diode Per Device 20 120 - 65 to 175 °C
Max
300 10
Units
V A
Case Styles
20CTH03
20CTH03S
20CTH03-1
20CTH03FP
Base Common Cathode
2
Base Common Cathode
2
Base Common Cathode
2
2
1 2 Common Cathode 3
1 2 Common Cathode 3
1 2 Common Cathode 3
1 Anode
Anode
Anode
Anode
Anode
Anode
Anode
Common Cathode
3 Anode
TO-220AB www.irf.com
D2PAK
TO-262
TO-220 FULLPACK 1
20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
Bulletin PD-20769 rev. A 08/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
V B R, V r VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
300 V V V µA µA pF nH IR = 100µA IF = 10A, TJ = 25°C IF = 10A, TJ = 125°C VR = VR Rated TJ = 125°C, VR = VR Rated VR = 300V Measured lead to lead 5mm from package body
1.05 1.25 0.85 0.95 6 30 8 20 200 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
31 42 2.4 5.6 36 120 35 30 nC A ns IF = 1A, diF/dt = 50A/µs, VR = 30V IF = 1A, diF/dt = 100A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 10A diF/dt = 200A/µs VR = 200V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ T Stg R thJC Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Per Diode Fullpack (Per Diode)
Min
- 65 -
Typ
-
Max
175 175 1.5 3.9
Units
°C °C/W
2
www.irf.com
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A 08/03
100
(mA)
100 10 1 0.1 0.01 0.001 50
Tj = 175°C 150°C 125°C 100°C 75°C 50°C 25°C
Instantaneous Forward Current - I
Tj = 175°C
Reverse Current - I
F
(A)
R
100
150
200
250
300
10
Tj = 125°C Tj = 25°C
Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
1000
(pF)
T J = 25°C
Junction Capacitance - C
T
100
1 0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
10
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
0
50
100
150
200
250
300
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
www.irf.com
3
20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
Bulletin PD-20769 rev. A 08/03
10
(°C/W)
Thermal Impedance Z
1
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
thJC
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thJC Characteristics (FULLPACK)
180
Allowable Case Temperature (°C) Allowable Case Temperature (°C)
180 170 160 150 140 130 Square wave (D = 0.50) 120
Rated Vr applied
170
DC
DC
160
Square wave (D = 0.50)
150 Rated Vr applied
see note (2)
110 see note (2) 100 0 2 4 6 8 10 12 14 16
F(AV)
140
0
2
4
6
8
10
12 14 16
(A) F(AV)
Average Forward Current - I
Average Forward Current - I
(A)
Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current
Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK)
20
Average Power Loss ( Watts )
16
RMS Limit
12 8 4 0
D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 8); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
DC
0
2
4
6
8
10 12 14 16
Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics
4
www.irf.com
20CTH03, 20CTH03S, 20CTH03-1, 20CH03FP
Bulletin PD-20769 rev. A 08/03
100
IF = 10A
1000
IF = 10A
Tj = 125°C
Qrr ( nC ) trr ( ns )
Tj = 125°C
100
Tj = 25°C
Tj = 25°C
Vr = 200V
Vr = 200V
10 100
1000
10 100
1000
di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt
di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. di F /dt
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T. dif/dt AD J U ST
diF /dt
D G IR FP250 S
Fig. 11- Reverse Recovery Parameter Test Circuit
www.irf.com
5
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20-1 20-2 20-3 20-4 20-5 20-6
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