|
Details, datasheet, quote on part number:2N6792
| |
Datasheet text preview:
PD -90428C
REPETITIVE A ALANCHE AND dv/dt RATED V
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
P r o d u c t Summary
Part Number IRFF320 BVDSS 400V RDS(on) 1.8 ID 2.0A
IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL
T h e HEXFET t e c h n o l o g y is the key to International Rectifier 's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resist a n c e combined with high transconductance. T h e HEXFET transistors also feature all of the well e s t a b l i s h e d advantages of MOSFETs such as volta g e control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. T h e y are well suited for applications such as switchi n g power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n n n n n
R e p e t i t i v e Avalanche Ratings D y n a m i c dv/dt Rating H e r m e t i c a l l y Sealed S i m p l e Drive Requirements E a s e of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IA R EA R dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O p e r a t i n g Junction Storage Temperature Range L e a d Temperature Weight For footnotes refer to the last page 2.0 1.25 10 20 0.16 ±20 0.19 -- -- 4.0 - 5 5 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
01/22/01
IRFF320
Electrical Characteristics
Parameter
BVDSS B VD S S/ T J RD S ( o n ) VGS(th) gfs IDSS
@ Tj = 25°C (Unless Otherwise Specified) Min
400 -- -- -- 2.0 1.0 -- -- -- -- 8.7 0.8 4.2 -- -- -- -- --
Typ Max U n i t s
-- 0.37 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 1.8 2.07 4.0 -- 25 250 100 -100 15.5 2.6 8.3 40 35 60 35 -- V V/°C V S( ) µA
Te s t Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 1.25A VGS =10V, ID =2.0A VDS = VGS, ID = 250µA VDS > 15V, IDS = 1.25A VDS= 320V, VGS=0V VDS = 320V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID =2.0A VDS= 200V VDD = 200V, ID = 2.0A, RG = 7.5
Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
G a t e - t o - S o u r c e Leakage Forward G a t e - t o - S o u r c e Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge T u r n - O n Delay Time Rise Time T u r n - O f f Delay Time Fall Time To t a l Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss Crss
I n p u t Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
350 100 45
-- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max U n i t s
-- -- -- -- -- -- -- -- -- -- 2.0 10 1.4 650 5.0
Te s t Conditions
A
V nS µC Tj = 25°C, IS =2.0A, VGS = 0V Tj = 25°C, IF =2.0A, di/dt 100A/µs VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max U n i t s
-- -- -- -- 6.25 175
°C/W
Te s t Conditions
Typical socket mount.
N o t e : Corresponding Spice and Saber models are available on the G&S Website. F o r footnotes refer to the last page
2
www.irf.com
IRFF320
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFF320
111a& bb 33a& b 13 3 a& b a&
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFF320
VDS V GS RG
RD
D.U.T.
+
-V D D
10V
Pulse Width 1 µs Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
|
|
