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Details, datasheet, quote on part number:30CTH02FP
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Datasheet text preview:
Bulletin PD-20768 rev. B 05/04
30CTH02 30CTH02S 30CTH02-1 30CTH02FP
Hyperfast Rectifier
Features
· · · · Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
trr =30ns max. IF(AV) = 30Amp VR = 200V
Description/ Applications International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
V RRM IF(AV) Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 159°C Per Diode Per Device IFSM TJ, TSTG Non Repetitive Peak Surge Current @ TJ = 25°C Operating Junction and Storage Temperatures @ TC = 125°C (FULLPACK) Per Diode 30 200 - 65 to 175 °C
Max
200 15
Units
V A
Case Styles
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Base Common Cathode
2
Base Common Cathode
2
Base Common Cathode
2
2 1
3
1
Anode
2 Common Cathode
3
1
Anode
Anode
2 Common Cathode
3
1
Anode
Anode
2 Common Cathode
Anode
Common Cathode
3 Anode
Anode
TO-220AB www.irf.com
D2PAK
TO-262
TO-220 FULLPACK 1
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. B 05/04
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
200 V V V µA µA pF nH IR = 100µA IF = 15A, TJ = 25°C IF = 15A, TJ = 125°C VR = VR Rated TJ = 125°C, VR = VR Rated VR = 200V Measured lead to lead 5mm from package body
0.92 1.05 0.78 0.85 5 57 8 10 300 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
26 40 2.8 6.0 37 120 35 30 nC A ns IF = 1A, diF/dt = 50A/µs, VR = 30V IF = 1A, diF/dt = 100A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 15A diF/dt = 200A/µs VR = 160V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ TStg RthJC Max. Junction Temperature Range Max. Storage Temperature Range - 65
Min
-
Typ
175 30CTH02 30CTH02S 30CTH02-1 30CTH02FP
Max
175 1.1 3.5
Units
°C °C/W Case Style TO-220 Case Style D2Pak Case Style TO-262 Case Style Fullpack
Thermal Resistance,
Junction to Case Device Marking
Per Diode Fullpack (Per Diode)
Mounting Surface, Flat, Smooth and Greased
2
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30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. B 05/04
100
(mA)
100
Tj = 175°C
10 1 0.1 0.01 0.001
150°C 125°C 100°C 75°C 50°C 25°C
Instantaneous Forward Current - I
Tj = 175°C
Reverse Current - I
F
(A)
R
0.0001
0
50
100
150
200
10
Tj = 125°C Tj = 25°C
Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
1000
(pF)
T J = 25°C
Junction Capacitance - C
T
100
1 0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
50
100
150
200
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
(°C/W)
Thermal Impedance Z
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
thJC
PDM
0.1
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
10
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3
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. B 05/04
10
(°C/W)
Thermal Impedance Z
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
thJC
PDM
0.1
Single Pulse (Thermal Resistance)
Notes:
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thJC Characteristics (FULLPACK)
180
Allowable Case Temperature (°C) Allowable Case Temperature (°C)
180 170 160 150 140 130 120
Square wave (D = 0.50) Rated Vr applied
170
DC
160
Square wave (D = 0.50)
DC
150 Rated Vr applied
see note (2)
110 see note (2) 100 0 5 10 15 20
(A) F(AV)
140
0
5
10
15
20
(A) F(AV)
25
25
Average Forward Current - I
Average Forward Current - I
Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current
Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK)
25
Average Power Loss ( Watts )
20 15 10 5 0
DC
RMS Limit
D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 8); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
0
Average Forward Current - IF(AV) (A)
5
10
15
20
25
Fig. 8 - Forward Power Loss Characteristics
4
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30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. B 05/04
100
IF = 15 A
1000
IF = 15 A
Qrr ( nC )
V R = 390V T J = 125°C T J = 25°C
trr ( ns )
100
10 100
1000
10 100
V R = 390V T J = 125°C T J = 25°C
1000
di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt
di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. di F /dt
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T. dif/dt ADJUST
diF /dt
D G IRFP250 S
Fig. 11- Reverse Recovery Parameter Test Circuit
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5
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