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Part: 40MT120UHT
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1200V Ultrafast 10-30 KHZ Half-bridge Igbt in a MTP Package
Company: International Rectifier Corp.
Datasheet: Download 40MT120UHT datasheet File size : 138 kB
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Datasheet text preview:
I27126 rev. C 02/03
40MT120UH
"HALF-BRIDGE" IGBT MTP
Features
Technology · Positive VCE(ON)Temperature Coefficient · 10µs Short Circuit Capability · HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery · Low Diode VF · Square RBSOA · Aluminum Nitride DBC · Optional SMT Thermistor (NTC) · Very Low Stray Inductance Design for High Speed Operation · UL approved (file E78996)
· UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
VCES = 1200V IC = 80A TC = 25°C
Benefits
Applications · Rugged with UltraFast Performance · Benchmark Efficiency above 20KHz · Outstanding ZVS and Hard Switching Operation · Low EMI, requires Less Snubbing · Excellent Current Sharing in Parallel Operation · Direct Mounting to Heatsink · PCB Solderable Terminals
· Optimized for Welding, UPS and SMPS
M MTP
Absolute Maximum Ratings Parameters
VCES I I I I I
C
Max
1200 @ TC = 25°C @ TC = 105°C 80 40 160 160 @ TC = 105°C 21 160 ± 20 2500 463 185 @ TC = 25°C @ TC = 100°C
Units
V A
Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT)
CM LM F FM
VGE VISOL PD
V W
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1
40MT120UH
I27126 rev. C 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
V(BR)CES V(BR)CES/ TJ VC E ( O N )
Min Typ Max Units Test Conditions
+1.1 3.36 4.53 3.88 5.35 -12 35 0.4 0.2 250 1.0 10 ±250 3.59 4.91 4.10 5.68 6 V V/°C V VGE = 0V, I C = 250µA VGE = 0V, I C = 3mA (25-125°C) = = = = = = = = = = = 15V, I C = 40A 15V, I C = 80A 15V, I C = 40A T J = 150°C 15V, I C = 80A T J = 150°C VGE, I C = 500µA VGE, I C = 1mA (25-125°C) 50V, IC = 40A, PW = 0V, V C E = 1200V, TJ 0V, V C E = 1200V, TJ 0V, V C E = 1200V, TJ ± 20V 80µs = 25°C = 125°C = 150°C
Collector-to-Emitter Breakdown Voltage 1 2 0 0 Temperature Coeff. of B r e a k d o w n Voltage Collector-to-Emitter Saturation Voltage
VG E ( t h ) VG E ( t h ) / TJ g fe I CES
G a t e Threshold Voltage T e m p e r a t u r e Coeff. of T h r e s h o l d Voltage Transconductance Zero Gate Voltage Collector Current
4
VGE VGE VGE VGE V VC E mV/°C VC E S µA mA nA VC E VGE VGE VGE VGE
IGES
Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Qg Qg e Qg c Eon Eoff Etot Eon Eoff Etot Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
399 43 187 1142 1345 2487 1598 1618 3216 599 65 281 1713 2018 3731 2397 2427 4824 nC IC = 40A VCC = 600V VGE = 15V VCC = 600V, IC = 40A VGE = 15V, Rg = 5, L = 200µH TJ = 25°C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 40A VGE = 15V, Rg = 5, L = 200µH TJ = 125°C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz TJ = 150°C, IC = 160A VCC = 1000V, Vp = 1200V Rg = 5, VGE = +15V to 0V TJ = 150°C VCC = 900V, Vp = 1200V Rg = 5, VGE = +15V to 0V
µJ
µJ
5521 8282 380 570 171 257 full square
pF
SCSOA
Short Circuit Safe Operating Area
10
µs
2
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40MT120UH
Bulletin I27126 rev. B 10/02
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VFM D i o d e Forward Voltage Drop
Min
Typ Max Units Test Conditions
2.98 3.90 3.08 4.29 3.12 574 120 43 3.38 4.41 3.39 4.72 3.42 861 180 65 V I C = 40A I C = 80A I C = 40A, TJ = 125°C I C = 80A, TJ = 125°C I C = 40A, TJ = 150°C VGE = 15V, Rg = 5, L = 200µH VCC = 600V, IC = 40A T J = 125°C
E rec trr Irr
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
µJ ns A
Thermistor Specifications (40MT120UHT only)
Parameters
R0
(1) (1) (1) (2)
Min Typ
30 4000
(2)
Max Units Test Conditions
k K T 0 = 25°C T 0 = 25°C T 1 = 85°C Temperatures in Kelvin
Resistance Sensitivity index of the thermistor material
T0,T1 are thermistor's temperatures
R0 = exp R1
[(1 T
0
1 T1
)],
Thermal- Mechanical Specifications
Parameters
TJ T STG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink IGBT Diode Module 5.5 8 3 ± 10% 66 Nm g (oz)
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40 - 40
Typ
Max
150 125
Units
°C °C/ W
0.20 0.39 0.06
0.27 0.59
Clearance (external shortest distance in air
between two terminals)
mm
Creepage (shortest distance along external
surface of the insulating material between 2 terminals)
T Wt
Mounting torque to heatsink Weight
compound. Lubricated threads
(3)
( 3 ) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
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3
40MT120UH
I27126 rev. C 02/03
100
600 500 400
80
PD (W)
60
IC (A)
300 200
40
20
100 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 T C (°C) T C (°C)
0
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
100
10
IC (A)
10 µs 100 µs
IC (A)
10 1
1 10ms 0.1 DC
0.01 1 10 100 VCE (V) 1000 10000
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA TC = 25°C; TJ 150°C
Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V
4
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40MT120UH
Bulletin I27126 rev. B 10/02
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
ICE (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
120 100 80 -40°C 25°C 125°C
ICE (A)
IF (A)
80 60 40 20 0 0 2 4 6 VCE (V) 8 10
60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 VF (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs
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Others parts begin by 40
40-1 40-2 40-3
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