Details, datasheet, quote on part number: 444CNQSeries
Part444CNQSeries
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => >100 Amp
Title>100 Amp
Description440 Amp Schottky Rectifier
CompanyInternational Rectifier Corp.
DatasheetDownload 444CNQSeries datasheet
  

 

Features, Applications

IF(AV) Rectangular waveform VRRM range IFSM 5 µs sine 220Apk, TJ=125°C (per leg) range

The 444CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 125 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. °C TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability

NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 2. CONTROLLING DIMENSION: MILLIMETER
Modified JEDEC Outline TO-244AB Dimensions in millimeters and (inches)
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)

IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 Non-Repetitive Avalanche Energy (Per Leg) Repetitive Avalanche Current (Per Leg) mJ A Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 5µs Sine or 3µs Rect. pulse = 25 °C, IAS = 40 Amps, 0.34 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. x VR typical

VFM Max. Forward Voltage Drop (Per Leg) * See Fig. 1 (1)

Max. Reverse Leakage Current (Per Leg) * See Fig. 2 (1) Max. Junction Capacitance (Per Leg) Typical Series Inductance (Per Leg)

= 5VDC, (test signal range 1Mhz) 25°C From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change (Rated VR)
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range

to °C °C/W DC operation °C/W DC operation °C/W Mounting surface , smooth and greased g (oz.) Kg-cm (Ibf-in) * See Fig. 4

RthJC Max. Thermal Resistance Junction to Case (Per Leg) RthJC Max. Thermal Resistance Junction to Case (Per Package) RthCS Typical Thermal Resistance, Case to Heatsink wt Approximate Weight T Mounting Torque Base Min. Max. Mounting Torque Center Hole Typ. Terminal Torque Min. Max. Case Style

Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg)
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg)
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)

t1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)


 

Some Part number from the same manufacture International Rectifier Corp.
448IRF Power MOSFET ( Vdss=500v, RDS ( on ) =0.60ohm, Id=11a )
45CIQ100 Schottky Rectifier 45 Amp
45CKQ100
45L Standard Recovery Diodes Stud Version
45L10 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45L120D 1200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45L20 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45LF100 Standard Recovery Diodes Stud Version
45LR Standard Recovery Diodes
45LR10 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45LR100 Standard Recovery Diodes Stud Version
45MT160P Three Phase Controlled Bridge Power Module 40a 1600v
4730 Standard Recovery Diode
47CTQ020 20V 40A Schottky Common Cathode Diode in a TO-220AB Package
47L100 Standard Recovery Diode
47L120D
47L160D
47LF100
47LF120D
47LF160D
47LFR100

JANTX1N6763R : 12A Center-tap Ultra-fast Rectifier

IRKT230-08D20 : SCR / SCR and SCR / Diode

IRKC91/10A : Add-a-pak GEN V Power Modules

IRFH5302DTRPBF : Fet - Single Discrete Semiconductor Product 29A 30V 3.6W Surface Mount; MOSFET N-CH 30V 29A 8VQFN Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 30V ; Current - Continuous Drain (Id) @ 25° C: 29A ; Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V ; Input Capacitance (Ciss) @ Vds: 3635pF @ 25V ; Power - Max: 3.6W ; Packaging: Ta

IRFS3004-7P : 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0018 ohms ; Package Type: PLASTIC, D2PAK-3 ; Number of units in IC: 1

SD153N16S15MSV : 150 A, 1600 V, SILICON, RECTIFIER DIODE, DO-205AC Specifications: Configuration: Single ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 150000 mA ; trr: 1.5 ns ; VRRM: 1600 volts ; RoHS Compliant: RoHS

12FLR5PBF : 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA Specifications: Package: DO-4, DO-4, 1 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 12000 mA ; trr: 0.2000 ns ; RoHS Compliant: RoHS

5962-0255801HZX : 1-OUTPUT 66 W DC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 3.3 volts ; Input Voltage: 30 to 80 volts ; Output Power: 66 watts (0.0885 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F)

Same catergory

1SMB10CAT3 : Zener Transient Voltage Suppressors , Package: Smb, Pins=2. 600 Watt Peak Power Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor's exclusive, cost-effective, highly.

2SJ420 : P-channel Silicon MOSFET, Ultrahigh-speed Switching Application. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance.

BUK102-50GS : BUK102-50GS; Powermos Transistor TopFET. Monolithic temperature and overload protected power MOSFET a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. SYMBOL VDS PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS 10 V MAX.

DTC123J : Bias Resistor Transistor. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base­emitter.

FX50KMJ-2 : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory.

KSB1015 : PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value Units °C Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tSTG.

MCTV65P100F1 : 65a, 1000v P-type MOS Controlled Thyristor ( MCT ). 65A, -1000V VTM = 65A and +150oC 2000A Surge Current Capability 2000A/µs di/dt Capability MOS Insulated Gate Control 100A Gate Turn-Off Capability at +150oC The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an insulated MOS gate. It is designed for use in motor controls, inverters,.

NTE2942 : MOSFET. N-channel, Enhancement Mode High Speed Switch.. NTE2942 MOSFET N­Channel, Enhancement Mode High Speed Switch : D Low Static Drain­Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings: Drain­Source Voltage (Note 1), VDSS. 100V Drain­Gate Voltage (RGS = 1M, Note 1), VDGR.

PHB2N50E : PHP2N50E/PHB2N50E/PHD2N50E; Powermos Transistors Avalanche Energy Rated.

PP150T060 : IGBT Assemblies (POW-R-PAK). Voltage = 600V ;; Current = 150A ;; Circuit Configuration = 3 Phase.

YG811S04R : Silicon Diode. Low VF Super high speed switching. High reliability by planer design. Applications Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Terminals to Case,.

APT24M80B : N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss \"Miller\" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon.

BSX64LEADFREE : 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

FS0802BH00TR : 8 A, 200 V, SCR, TO-220AB. s: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 8 amps ; IGT: 0.2000 mA ; Standards and Certifications: RoHS ; Package Type: TO-220, TO-220AB, 3 PIN ; Pin Count: 3.

HFM201A : 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 2000 mA ; trr: 0.0500 ns ; RoHS Compliant: RoHS.

MKXR3W23304B00KBSD : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 0.033 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.0330 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: Through Hole ; Operating.

RWF5020JK-130R1 : RES,SMT,WIREWOUND,100M OHMS,5% +/-TOL,-1000,1000PPM TC,4720 CASE. s: Category / Application: General Use.

S100A : 10 A CURRENT SENSE TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Current-Sense ; Mounting: Chip Transformer ; Operating Frequency: 50000 to 1.00E6 Hz ; Standards: RoHS.

272--100-JBW : RESISTOR, WIRE WOUND, 10 W, 5 %, 20 ppm, 10 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 20 Ā±ppm/Ā°C ; Power Rating: 10 watts (0.0134 HP) ; Operating.

 
0-C     D-L     M-R     S-Z