Details, datasheet, quote on part number: 45L10
Part45L10
CategoryDiscrete
Description100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
CompanyInternational Rectifier Corp.
DatasheetDownload 45L10 datasheet
Cross ref.Similar parts: 45LR5
Quote
Find where to buy
 
  

 

Features, Applications

Features

Alloy diode High current carrying capability High surge current capabilities Stud cathode and stud anode version

Typical Applications

Battery charges Welders Machine tool controls High power drives Medium traction applications Freewheeling diodes

VRRM , maximum repetitive peak reverse voltage V
VRSM , maximum nonrepetitive peak rev. voltage V

I F(AV) Max. average forward current @ Case temperature I F(RMS) Max. RMS forward current I FSM Max. peak, one-cycle forward, non-repetitive surge current

@ 142C case temperature KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial = TJ max. 180 conduction, half sine wave

V F(TO)1 Low level value of threshold V F(TO)2 High level value of threshold voltage V FM Low level value of forward slope resistance High level value of forward slope resistance Max. forward voltage drop

> x IF(AV)),TJ = TJ max. Ipk= = 10ms sinusoidal wave > x IF(AV)),TJ = TJ max. (16.7% x IF(AV) IF(AV)), = TJ max.

TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque 45L Min. Max. Min. Max. 150K 150KS Min. Max. Min. Max. wt Approximate weight 45L Case style 150K-A 150KS

DC operation Mounting surface, smooth, flat and greased Not lubricated threads

(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

= Standard version = Essential Part Number = Stud Reverse Polarity (Anode to Stud)

None = Stud Normal Polarity (Cathode to Stud) Voltage code: Code 10 = VRRM (See Voltage Ratings table)


 

Related products with the same datasheet
45L100
45L20
45L40
45L60
45L80
45LR10
Some Part number from the same manufacture International Rectifier Corp.
45L100 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45L120D 1200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45L20 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45LF100 Standard Recovery Diodes Stud Version
45LR Standard Recovery Diodes
45LR10 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package
45LR100 Standard Recovery Diodes Stud Version
45MT160P Three Phase Controlled Bridge Power Module 40a 1600v
4730 Standard Recovery Diode
47CTQ020 20V 40A Schottky Common Cathode Diode in a TO-220AB Package
47L100 Standard Recovery Diode
47L120D
47L160D
47LF100
47LF120D
47LF160D
47LFR100
47LFR120D
47LFR160D
47LR100
47LR120D

ATR28XXS :

JANTX2N6798U : 200V Single N-channel Hi-rel MOSFET in a 18-pin LCC Package

OM6020SW : 200V Single N-channel Hi-rel MOSFET in a TO-254AA Package

IRFIZ44N-003PBF : 30 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0280 ohms ; Number of units in IC: 1

IRHM57260SEPBF : 35 A, 200 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0490 ohms ; Package Type: HERMETIC SEALED, TO-254AA, 3 PIN ; Number of units in IC: 1

IRL3803VSTRL : 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0060 ohms ; Number of units in IC: 1

OM2940-05SMM : 5 V FIXED POSITIVE LDO REGULATOR, 1 V DROPOUT, CQCC28 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Fixed ; Package Type: Other, HERMETIC SEALED, SMT-28 ; Life Cycle Stage: ACTIVE ; Output Voltage: 4.75 to 5.25 volts ; IOUT: 1 amps ; VIN: 7 volts ; Dropout Voltage: 1 volts

SD300N25PCPBF : 380 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB Specifications: Number of Diodes: 1 ; VRRM: 2500 volts ; IF: 380000 mA

Same catergory

APT4020BVR : 400V, 23A Power MOS V Transistor. Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source.

CM300DU-12H : 300 Amp Igbt Module For High Power Switching Use Insolated Type. : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal.

IRFP450 : 500V Standart Power MOSFET. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions to 150C; RGS 1 M Continuous Transient = 25C, pulse width limited by TJM 25C IS IDM, di/dt 100 A/s, VDD VDSS, = 25C Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s International standard packages Low RDS (on) HDMOSTM process Rugged.

PHB95N03LT : PHP/PHB/PHE95N03LT; Trenchmos (tm) Logic Level FET;; Package: SOT404 (D2-PAK).

SM4TY : TVS Clamping Diodes Automotive 400 W Transil\". peak pulse power: W (10/1000 s) kW (8/20 s) stand-off voltage range: from 58 V unidirectional and bidirectional types low leakage current: 85 C operating Tj max: 150 C high power capability at Tj max: W (10/1000 s) JEDEC registered package outline resin meets V0 AEC-Q101 qualified The SM4TY Transil series has been designed to protect sensitive.

03028-BR102AJZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

03028BR151AJZL : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.50E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

05002-270AKMP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.70E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

08261G4L43-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

EN4707A : 200 V, SILICON, RECTIFIER DIODE. s: Package: 7007B-005, PCP-3 ; Number of Diodes: 1 ; VRRM: 200 volts ; trr: 0.3000 ns.

FDB8442_F085 : 28 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0029 ohms ; Package Type: ROHS COMPLIANT PACKAGE-3 ; Number of units in IC: 1.

FUR520 : 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 200 volts ; IF: 5000 mA ; trr: 0.0500 ns ; RoHS Compliant: RoHS.

1SS303-A : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 3 ; Number of Diodes: 2.

2N6386LEADFREE : 8 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

66218 : 1 ELEMENT, 10000000 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: WIRE ; Molded / Shielded: Shielded ; Application: General Purpose, RF Choke ; Inductance Range: 1.00E7 microH ; Rated DC Current: 4.2 milliamps.

 
0-C     D-L     M-R     S-Z