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Part: 4GBL
Category:
Description:
Company: International Rectifier Corp.
Datasheet: Download 4GBL datasheet File size : 67 kB
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Preliminary Data Sheet rev. C I2716 03/01
4GBL Series
4.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 VRMS) Leads are suitable for high temperature Soldering at 260°C for 8-10 seconds UL evaluation is under process
Bridge Rectifier
IO(AV) = 4A VRRM = 50/ 800V
Description T h e s e GBL Series of Single Phase Bridges consist o f four glass passivated silicon junction connected a s a Full Wave Bridge. These four junctions are e n c a p s u l a t e d by plastic molding technique. These B r i d g e s are mainly used in Switch Mode power s u p p l y and in industrial and consumer equipment.
Major Ratings and Characteristics Parameters
IO @ TC IFSM @ 50Hz @ 60Hz It
2
4GBL
4 50 150 158 113 104 50 to 800 - 55 to 150
Units
A
°C
A A A2s A2s V
o
@ 50Hz @ 60Hz
4GBL
VRRM TJ
range
C
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1
4GBL Series
Preliminary Data Sheet rev. C I2716 03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage Code VRRM , max repetitive peak rev. voltage TJ = TJ max. V 50 100 200 400 600 800 VRSM , max non-repetitive peak rev. voltage TJ = TJ max. V 80 150 300 500 700 900 IRRM max. @ rated VRRM TJ = 25°C µA 5 5 5 5 5 5 IRRM max. @ rated VRRM TJ = 150°C µA 400 400 400 400 400 400
4GBL
005 01 02 04 06 08
Forward Conduction
Parameters
IO IFSM Maximum DC output current Maximum peak, one-cycle non-repetitive surge current, following any rated load condition and with rated VRRM reapplied I2t VFM IRM VRRM M a x i m u m I 2t for fusing, initial TJ = TJ max Maximum peak forward voltage p e r diode Typical peak reverse leakage curren t per diode Maximum repetitive peak reverse voltage range 50 to 800 V 113 104 1.1 5 V µA A2s t = 10ms t = 8.3ms TJ = 25 oC, IFM = 4A TJ = 25 oC, 100% VRRM 158 t = 8.3ms, 16.7ms TJ = 150°C
4GBL
4 3.2 150
Unit
A
Conditions
TC = 50°C, Resistive & inductive load TC = 50°C, Capacitive load t = 10ms, 20ms
Thermal and Mechanical Specifications
Parameters
TJ Tstg RthJC RthJA W Operating and storage temperature range Max. thermal resistance junction to case Thermal resistance, junction to ambient Approximate weight 2 (0.07) g (oz) 22 °C/ W D C rated current through bridge (1) 6.5 °C/ W D C rated current through bridge (1)
4GBL
-55 to 150
Unit
o
Conditions
C
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
2
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4GBL Series
Preliminary Data Sheet rev. C I2716 03/01
Ordering Information Table
Device Code
4 1
1 2 3 -
GBL 2
08 3
Bridge current Basic Part Number Voltage Code: code x 100 = VRRM
Outline Table
All dimensions are in millimeters
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4GBL Series
Preliminary Data Sheet rev. C I2716 03/01
Maximum Allowable Case Temperature (°C)
160 140 120 100 80 60 40 20 0 1 2 3 4 5
Average Forward Current (A) Fig. 1 - Current Ratings Characteristics
1000
4GBL Series
Instantaneous Forward Current (A)
100
180° (Rect)
10
T J = 25°C T J = 150°C
180° (Sine)
1
4GBL Series
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
7 6 5 4 3 2 1 0 0 1 2 3 4
Average Forward Current (A) Fig. 3 - Total Power Loss Characteristics
160 140 120 100 80 60 40 1
180° (Sine) 180° (Rect)
At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
4GBL Series T J = 150°C
4GBL Series
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
4
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4GBL Series
Preliminary Data Sheet rev. C I2716 03/01
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 T A C Fax: (310) 252-7309 V i s i t us at www.irf.com for sales contact information. 03/01
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5
Others parts begin by 4g
4G-1
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