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Part: 50RIA80

Category:
 Discrete

Description: 800V 50A Phase Control SCR in a TO-208AC (TO-65) Package

Company: International Rectifier Corp.

Datasheet: Download 50RIA80 datasheet     File size : 78 kB

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Datasheet text preview:
Bulletin I2401 rev. A 07/00

50RIA SERIES
MEDIUM POWER THYRISTORS Features
H i g h current rating E x c e l l e n t dynamic characteristics d v / d t = 1000V/µs option S u p e r i o r surge capabilities S t a n d a r d package M e t r i c threads version available T y p e s up to 1600V V D R M / V R R M

Stud Version

50 A

Typical Applications
P h a s e control applications in converters L i g h t i n g circuits B a t t e r y charges R e g u l a t e d power supplies and temperature and s p e e d control circuit C a n be supplied to meet stringent military, a e r o s p a c e and other high-reliability requirements

Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2

10 to 120
50 94 80

50RIA 140 to 160
50 90 80 1200 1257 7.21 6.58 1400 to 1600 110

Units
A °C A A A KA2s KA2s V µs °C

@ 50Hz @ 60Hz

1430 1490 10.18 9.30 100 to 1200

It

@ 50Hz @ 60Hz

V D R M/ V R R M tq TJ typical

- 40 to 125

C a s e Style T O - 2 0 8 A C (TO-65)

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1

50RIA Series
Bulletin I2401 rev. A 07/00

ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
10 20 40 60 50RIA 80 100 120 140 160

V D R M / V R R M , max. repetitive peak and off-state voltage (1) V
100 200 400 600 800 1000 1200 1400 1600

VRSM , maximum nonrepetitive peak voltage (2) V
150 300 500 700 900 1100 1300 1500 1700

I D R M / I R R M max.
@ TJ = TJ max.

mA

15

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp 5ms

On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current

50RIA 10 to 120
50 94 80 1430 1490 1200 1255

140 to 160
50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1.17 4.78 3.97 1.78

Units
A °C A A

Conditions
180° sinusoidal conduction

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.

I2t

Maximum I2t for fusing

10.18 9.30 7.20 6.56

KA2 s

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

I2t VT(TO)1

Maximum I2t for fusing Low level value of threshold voltage

101.8 0.94 1.08 4.08 3.34 1.60 200 400

KA2s V

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Latching current

m

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ max.

V mA

Ipk= 157 A, TJ = 25°C TJ = 25°C. Anode supply 22V, resistive load, Initial IT = 2A Anode supply 6V, resistive load

2

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50RIA Series
Bulletin I2401 rev. A 07/00

Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 1600V td tq Typical delay time 200 100 0.9 µs Typical turn-off time 110 A/µs

50RIA

Units

Conditions
TC = 125°C, VDM = rated VDRM Gate pulse = 20V, 15, tp = 6µs, tr = 0.1µs max. ITM = (2x rated di/dt) A TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15 source, tp = 20µs TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, VR=50V

Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage

50RIA
200 500 (*)

Units Conditions
V/µs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM

(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.

Triggering
Parameter
PGM IG M +VGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger 10 250 100 50 VGT DC gate voltage required to trigger IG D VGD DC gate current not to trigger DC gate voltage not to trigger 3.5 2.5 5.0 0.2 V mA V mA TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 20 V

50RIA
10 2.5 2.5

Units Conditions
W A TJ = TJ max, t p 5ms

Max. required gate trigger c u r r e n t / v o l t a g e are the lowest value which will trigger all units 6V anode-to-cathode applied

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3

50RIA Series
Bulletin I2401 rev. A 07/00

Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range

50RIA
- 40 to 125 - 40 to 125 0.35

Units Conditions
°C °C K/W DC operation

RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque Min. Max. wt Approximate weight Case style

0.25

K/W

Mounting surface, smooth, flat and greased

2.8 (25) 3.4 (30) 28 (1.0)

Nm (lbf-in) g (oz)

Non-lubricated threads

TO-208AC (TO-65)

See Outline Table

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle
180° 120° 9 0° 60° 30°

Sinusoidal conduction Rectangular conduction Units
0.078 0.094 0.120 0.176 0.294 0.057 0.098 0.130 0.183 0.296 K/W

Conditions
TJ = TJ max.

Ordering Information Table
Device Code

50
1

RIA 160 S90
2 3 4

M
5

1 2 3 4

-

Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection)

5

-

None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 X 1

4

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50RIA Series
Bulletin I2401 rev. A 07/00

Outline Table

Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)

Maximum Allowable Case Temperature (°C)

50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W

Maximum Allowable Case Temperature (°C)

130

130

50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W

120
Conduction Angle

120

110

Conduction Period

110 30° 100 60°

100

90° 120° 180°

90 30° 80 0 10 20 60°

90° 120° 40

180° 60

DC 70 80

90

0

10

20

30

40

50

60

30

50

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Current Ratings Characteristic

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