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Part: 50WQ10F
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
-> 5 to 100 Amp
Description: Schottky Rectifier 5.5 Amp
Company: International Rectifier Corp.
Datasheet: Download 50WQ10F datasheet File size : 1326 kB
Request For quote: Find where to buy 50WQ10F
Datasheet text preview:
PD-2.312 rev. A 12/97
50WQ09F 50WQ10F
SCHOTTKY RECTIFIER 5.5 Amp
Major Ratings and Characteristics Characteristics
I F(AV) Rectangular waveform VRRM I FSM @ tp = 5 µs sine VF TJ @ 5 Apk, TJ = 25°C 90/100 210 0.93 - 40 to 125 V A V °C
Description/Features Units
A The 50WQ..F surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Popular D-PAK outline Small foot print, surface moutable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability
50WQ..F
5.5
CASE STYLE AND DIMENSIONS
D - PAK Outline (Similar to TO-252AA) Dimensions in millimeters and inches
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1
50WQ09F, 50WQ10F
PD-2.312 rev. A 12/97
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) 90 100 VRWM Max. Working Peak Reverse Voltage (V)
50WQ09F
50WQ10F
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7
50WQ..F Units
5.5 210 42 A
Conditions
50% duty cycle @ TC = 90 °C, rectangular wave form 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied
A
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop * See Fig. 1 (1)
50WQ..F Units
0.93 1.08 0.77 0.89 V V V V mA mA pF nH @ @ 5A 5A @ 10A @ 10A TJ = 25 °C TJ = 125 °C
Conditions
TJ = 25 °C TJ = 125 °C VR = rated VR
IRM CT LS
Max. Reverse Leakage Current * See Fig. 2 (1) Typical Junction Capacitance Typical Series Inductance
1 3 100 5.0
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C Measured lead to lead 5mm from package body
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
TJ T stg Max. Junction Temperature Range Max. Storage Temperature Range
50WQ..F Units
-40 to 125 -40 to 125 6.0 °C °C °C/W DCoperation
Conditions
RthJC Max. Thermal Resistance Junction to Case wt Approximate Weight Case Style
* See Fig. 4
0.3 (0.01) g (oz.) D - PAK Similar to TO-252AA
2
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50WQ09F, 50WQ10F
PD-2.312 rev. A 12/97
10 0
1 0
R v rs C r e t - I ( A e e e ur n m) R
1 T =1 5 C 2° J .1 1 0C 0° 7° 5C 5° 0C .0 1 0 2° 5C
.1 0
In ta t n o s F rw r C r e t - I ( ) s na e u o a d u r n A F
1 0
. 01 00 0
T =1 5 C 2° J T= 2 ° 5C J
2 0
4 0
6 0
8 0
10 0
R v r eV lt g - V (V e es o a e R )
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
10 0 J n tio C p cta c -C ( F u c n a ai ne p) T
1
T =2 ° 5C J
.1 . 4
. 6
.8
1
12 .
14 .
1 0 0
2 0
4 0
6 0
8 0
10 0
F r a dV lta e Do - V ( ) ow r o g r p V F M
R v r eV lta e- V ( ) e es o g RV
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1 0 T e m l Im e a c -Z h r a p d ne ( CW °/ ) tJ hC D=05 .0 D=03 .3 D=02 .5 1 D=01 .7 D=00 .8
PM D
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
t 1 t2 N te : os 1 D tyfa to D= t1/ t2 .u cr Sn le P ls ig ue ( h r a R ss a c ) T em l e i t n e 2 P a T =P xZ . ek +T JD M tJ hC C . 1 1 1 0 10 0
.1
.0 1 . 00 001
.0 0 01
.0 1 0
.0 1
t , R c a g la P ls D raio ( e o d ) et nu r u e u t nSc ns 1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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3
50WQ09F, 50WQ10F
PD-2.312 rev. A 12/97
10 3 Alo a leC s T m e au e- (° ) l wb ae e p r t r C Rt J ( C =60 CW .°/ hCD)
7 D=00 .8 .7 6 D=01 D=02 .5 D=03 .3 5 D=05 .0 4 3 2 1 0 0 D C
10 2
10 1
10 0
D C
A e a eP w r L s - ( ats v r g o e o s Wt )
R SLm M i it
9 0
8 0 0
2
4
6
8
2
4
6
8
A e a e F rw rdC rr n - IF A ) (A vrg o a uet (V )
A e a eF r a dC r e t - I v r g o w r ur n () A FA ) (V
Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1 0 00 (A) N on-R epetitiv e Surge Current - I
F SM
10 0
At Any Rated Load Condition And With Rated V Applied RR M Following Surge 10 10 100 1 00 0 1 00 0 0
Squa re Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
4
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