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Part: 5EQ100
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
-> 5 to 100 Amp
Description: Schottky Rectifier 8 Amp
Company: International Rectifier Corp.
Datasheet: Download 5EQ100 datasheet File size : 169 kB
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Datasheet text preview:
PD -20349C
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
5EQ100
8A, 100V
Major Ratings and Characteristics Characteristics IF(AV) V RRM IFSM @ tp = 8.3ms half-sine VF @ 8.0Apk, TJ =125°C 5EQ100 8.0 100 250 0.65 Units A V A V °C
Description/Features The 5EQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated LCC-18 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. · · · · Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long Term Reliability · Suface Mount · Lightweight
TJ, Tstg Operating and storage -55 to 150
Case Style
PIN LAYOUT
LEGEND
A = ANODE C = CATHODE NC = NO CONNECTION
Case Outline and Dimensions - LCC-18
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1
05/24/02
5EQ100
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
5EQ100 100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 250 A @ tp = 8.3 ms half-sine
Limits
8.0
Units
A
Conditions
50% duty cycle @ TC = 100°C, rectangular waveform
Electrical Specifications
Parameters
V FM Max. Forward Voltage Drop See Fig. 1Q
Limits
0.8 1.0 0.65 0.7
Units
V V V V mA mA pF nH @ 8.0A @ 16A @ 8.0A @ 16A TJ = 25°C TJ = 125°C
Conditions
TJ = 25°C TJ =1 25°C VR = rated VR
IRM CT LS
Max. Reverse Leakage Current See Fig. 2 Q Max. Junction Capacitance Typical Series Inductance
0.5 15 600 4.3
VR = 5VDC ( 1MHz, 25°C ) Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg RthJC wt Max.Junction Temperature Range Max. Storage Temperature Range Max. Thermal Resistance, Junction to Case Weight (Typical) Die Size Case Style 0.42 125X125 LCC-18 g mils
Limits Units
-55 to 150 -55 to 150 6.0 °C °C °C/W DC operation
Conditions
See Fig. 4
Q Pulse Width < 300µs, Duty Cycle < 2%
2
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5EQ100
100
Reverse Current - IR ( mA )
TJ = 175°C
10
150°C 125°C 75°C 50°C
1
0.1
0.01
0.001
25°C
A
0 20 40 60 80 100
0.0001
Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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5EQ100
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
5EQ100
R thJC = 6.0°C/W
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/02
4
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