Details, datasheet, quote on part number: 61CNQ
Part61CNQ
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => 5 to 100 Amp
Title5 to 100 Amp
DescriptionSchottky Rectifier 60 Amp
CompanyInternational Rectifier Corp.
DatasheetDownload 61CNQ datasheet
  

 

Features, Applications

IF(AV) Rectangular waveform VRRM IFSM 5 s sine @ 30 Apk, = 125C (per leg) A V

A The 61CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. C TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Low profile, small footprint, high current package

VR Max. DC Reverse Voltage (V) 40 45 VRWM Max. Working Peak Reverse Voltage (V)

IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 Non-Repetitive Avalanche Energy Repetitive Avalanche Current (Per Leg) (Per Leg) 6 A Current decaying linearly to zero in 1 sec Frequency limited by TJ max. x VR typical mJ 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied

VFM Max. Forward Voltage Drop (Per Leg) * See Fig. 1 (1)

Max. Reverse Leakage Current (Per Leg) * See Fig. 2 (1) Max. Junction Capacitance (Per Leg) Typical Series Inductance (Per Leg)

= 5VDC, (test signal range 1Mhz) 25C Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change (Rated VR)
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range

RthJC Max. Thermal Resistance Junction to Case (Per Leg) RthJC Max. Thermal Resistance Junction to Case (Per Package) RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style

C/W Mounting surface , smooth and greased g (oz.) Kg-cm (Ibf-in)
Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg)
Fig. 1 - Max. Forward Voltage Drop Characteristics (PerLeg)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)

 

Some Part number from the same manufacture International Rectifier Corp.
61CNQ035 Schottky Rectifier 60 Amp
61CTQ045 45V 60A Schottky Discrete Diode in a TO-220AB Package
62CNQ030 Schottky Rectifier 60 Amp
62CTQ030 30V 60A Schottky Discrete Diode in a TO-220AB Package
6302
63CNQ Schottky Rectifier 60 Amp
63CNQ080
63CPQ100
63CTQ100 100V 60A Schottky Common Cathode Diode in a TO-220AB Package
65PQ015 Schottky Rectifier 65 Amps
6CWQ03FN 30V 7A Schottky Common Cathode Diode in a D-pak Package
6CWQ04FN 40V 7A Schottky Common Cathode Diode in a D-pak Package
6CWQ06FN 60V 7A Schottky Common Cathode Diode in a D-pak Package
6CWQ10FN 100V 7A Schottky Common Cathode Diode in a D-pak Package
6F10 100V 6A Std. Recovery Diode in a DO-203AA (DO-4)package
6FL100S05 100V Fast Recovery Diode in a DO-203AA (DO-4) Package
6FL100S10
6FL10S02 100V Fast Recovery Diode in a DO-203AA (DO-4) Package
6FL10S10
6FL20S02 100V Fast Recovery Diode in a DO-203AA (DO-4) Package
6FL20S10
Same catergory

MMBF4119 : N-channel Switch. This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53. VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current *These ratings are limiting values above which the serviceability.

SRA2202EF : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature Output Cut-off Current DC Current Gain Output Voltage Input.

FDD8445 : # RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A # Qg(10) = 45nC (Typ), VGS=10V # Low Miller Charge # Low Qrr Body Diode # UIS Capability (Single Pulse/ Repetitive Pulse) # Qualified to AEC Q101 # RoHS Compliant.

03028BR392AKU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0039 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

06032U9R1BAT9A : CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.0000091 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 9.10E-6 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

08053G223ZAT2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.022 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0220 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 25 volts ; Mounting Style:.

APT-6016 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

BAT750-13 : 0.75 A, 40 V, SILICON, SIGNAL DIODE. s: Package: PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 750 mA.

PCN-10 : RESISTOR, 10 W, 5; 10; 20 %, 1500 ppm, 18 ohm - 23000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Operating DC Voltage: 800 volts ; Operating Temperature: -55 to 230 C (-67 to 446 F).

PML18 : RESISTOR, CURRENT SENSE, 1 W, 2; 5 %, 150 ppm, 0.0005 ohm - 0.0025 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Operating Temperature: -55 to 155 C (-67 to 311 F).

QL232EW115D : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2300 V, 115 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 115 microF ; WVDC: 2300 volts ; Mounting Style: CHASSIS MOUNT.

SIB86-1R0 : 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Rated DC Current: 10000 milliamps.

T2281S : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Frequency: 17000 to 600000 Hz.

UP412 : RESISTOR, WIRE WOUND, 30 W, 10 %, 75; 200 ppm, 0.09 ohm - 2.25 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Operating Temperature: -55 to 20 C (-67 to 68 F).

1-456-995-12 : 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 4.7 microH ; Rated DC Current: 1800 milliamps.

101H62 : CAPACITOR, CERAMIC, 100 V, SURFACE MOUNT, 4540. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

50702R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

7447452331 : GENERAL PURPOSE INDUCTOR. s: Application: General Purpose. Properties Inductance Rated current Saturation current DC Resistance DC Resistance Self resonant frequency Test conditions 1 kHz/ 40 K |L/L| L IR Isat RDC fres Value Unit H A MHz Tol. 10% max. typ. max. typ. It is recommended that the temperature of the part does not exceed 125C under worst case operating conditions.Ambient temperature: to +85C.

 
0-C     D-L     M-R     S-Z