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Part: 6302
Category:
Description:
Company: International Rectifier Corp.
Datasheet: Download 6302 datasheet File size : 94 kB
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PD - 9.1259D
IRLML6302
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
VDSS = -20V
G
RDS(on) = 0.60
S
Description
Fifth Generation HEXFETs from International Rectifier u t i l i z e advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M ic r o 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VG S dv/dt TJ,TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-0.78 -0.62 -4.9 540 4.3 ± 12 -5.0 -55 to + 150
Units
A mW
mW/°C
V V/ns °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
Max.
230
Units
°C/W
8/25/97
IRLML6302
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) V GS(th) gfs IDSS I GSS Qg Q gs Qgd t d(on) tr t d(off) tf C iss C oss Crss
Min. -20 -0.70 0.56
Typ. -4.9 2.4 0.56 1.0 13 18 22 22 97 53 28
Max. Units V mV/°C 0.60 0.90 V S -1.0 µA -25 -100 nA 100 3.6 0.84 nC 1.5 ns pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, I D = -1mA VGS = -4.5V, ID = -0.61A VGS = -2.7V, ID = -0.31A VDS = VGS, ID = -250µA VDS = -10V, ID = -0.31A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = -12V VGS = 12V ID = -0.61A V DS = -16V VGS = -4.5V, See Fig. 6 and 9 VDD = -10V I D = -0.61A RG = 6.2 RD = 16, See Fig. 10 VGS = 0V VDS = -15V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -0.54 A 35 26 -4.9 -1.2 53 39 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -0.61A, VGS = 0V TJ = 25°C, IF = -0.61A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD -0.61A, di/dt 76A/µs, VDD V(BR)DSS,
TJ 150°C
IRLML6302
10
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM - 1.5V TOP
10
- I D , D r a in - to - S o u r c e C u r r e n t (A )
- ID , D r a i n - t o - S o u r c e C u r r e n t (A )
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM - 1.5V TOP
1
1
0.1
0.1
- 1 .5 V 20 µ s P U L S E W I D T H TJ = 150 ° C
0.1 1 10
0.01 0.1
- 1 .5 V
1
20 µ s P U L S E W I D T H TJ = 25 ° C A
10
0.01
A
- VD S , D ra i n - t o - S o u rc e V o lt a g e (V )
- VD S , Drain-to-Source V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
- I D , D r a in - to - S o u r c e C u r r e n t ( A )
T J = 25 ° C
R D S (o n ) , D r a i n - t o - S o u r c e O n R e s i s t a n c e ( N o r m a li z e d )
I D = -0.61 A
1.5
T J = 1 5 0 °C
1
1.0
0.1
0.5
0.01 1.5 2.0 2.5 3.0
V DS = -1 0 V 20µs P ULS E W IDT H
3.5 4.0 4.5
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = -4.5 V
100 120 140 160
A
- VG S , Ga t e - t o - S o u r c e V o l t a g e (V )
T J , Junction T e m p e r a t u r e (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLML6302
180 160 140
- V G S , G a t e - t o - S o u r c e V o l t a g e (V )
V GS C is s C rs s C os s
= = = =
0V , f = 1MH z C gs + C g d , Cds SH O R T E D Cgd C ds + C gd
10
I D = -0.6 1 A VD S = -16 V
C iss C os s
8
C , C a p a c i t a n c e (p F )
120 100 80 60 40 20 0 1
6
C rss
4
2
A
10 100
0 0.0 1.0 2.0
FO R TEST C IR C U IT SEE F IG U R E 9
3.0
A
4.0
- VD S , Drain-to-Source V o l t a g e (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
- IS D , R e v e r s e D r a i n C u r r e n t (A )
O P E R A T I O N IN TH IS AR E A LIM IT E D BY R D S ( o n )
- I D , D r a i n C u r r e n t (A )
1
100µ s
TJ = 1 5 0 ° C T J = 2 5°C
0.1
1 1m s
10m s
0.01 0.4 0.6 0.8 1.0
VG S = 0 V
1.2
A
0.1 1
T A = 25 ° C T J = 15 0 ° C S in g le Pulse
10
1.4
A
100
- VS D , S o u rc e -t o - D r a i n V o l t a g e (V )
- V D S , D r a i n - t o - S o u r c e Voltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLML6302
QG
VDS VGS
RD
-4.5V
QGS VG QGD
D.U.T.
+
-4.5V
Pulse Width 1 µs Duty Factor 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2µF .3µF
90%
VGS
-3mA
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
(Z t h J A )
100
D = 0.50 0.20 0.10
Thermal Response
10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
D.U.T.
VDS
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
t1, Rectangular Pulse Duration (sec)
-
RG
VDD
-
Others parts begin by 63
63-1
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