Details, datasheet, quote on part number: 6FL40S05
Part6FL40S05
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Diodes
Description100V Fast Recovery Diode in a DO-203AA (DO-4) Package
CompanyInternational Rectifier Corp.
DatasheetDownload 6FL40S05 datasheet
Quote
Find where to buy
 
  
Related products with the same datasheet
12FL10S05
12FL20S02
12FL20S05
12FL40S02
12FL40S05
12FL60S02
12FL60S05
12FL80S05
16FL100S05
16FL10S02
16FL10S05
16FL20S02
Some Part number from the same manufacture International Rectifier Corp.
6FL60S02 100V Fast Recovery Diode in a DO-203AA (DO-4) Package
6FL60S10
6FL80S05 100V Fast Recovery Diode in a DO-203AA (DO-4) Package
6FL80S10
6FR Standard Recovery Diodes
6FR40 100V 6A Std. Recovery Diode in a DO-203AA (DO-4)package
6GBU
6GBUSeries 6.0 Amp Single Phase Full Wave Bridge Rectifier
6TQ Schottky Rectifier 6 Amp
6TQ035 35V 6A Schottky Discrete Diode in a TO-220AC Package
6TQTQ035 Schottky Rectifier 6 Amp
70/300UR Standard Recovery Diodes
70300U Standard Recovery Diodes Stud Version
70CRU02 200V 35A Ultra-fast Doubler Diode in a TO-218 Package
70CRU04 400V 70A Ultra-fast Doubler Diode in a TO-218 Package
70EPF02 200V Fast Recovery Diode in a Powirtab Package
70EPF08 800V Fast Recovery Diode in a Powirtab Package
70EPS Input Rectifier Diode
70EPS08 800V 70A Std. Recovery Diode in a Powirtab (Short) Package
70HA100 Standard Recovery Diodes
70HA120

30CTQ : 5 to 100 Amp Schottky Rectifier 30 Amp

IRG4IBC20UD : Medium Voltage 600-1199 Volts 600V Ultrafast 8-60 KHZ Copack Igbt in a TO-220 Fullpak Package

IRF1407LPBF : Hexfet Power Mosfet ( VDSS = 75V , Rds(on) = 0.0078 , ID = 100A )

AUIRLR3114ZTRR : Hexfet Power Mosfet his HEXFET� Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175�C junction operating temperature, fast switching speed and improved repetitive avalanche rating . Th

AUIRFR3607TRL : 56 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 75 volts ; rDS(on): 0.0090 ohms ; Package Type: ROHS COMPLIANT, PLASTIC, DPAK-3 ; Number of units in IC: 1

IRLZ44N-004PBF : 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 55 volts ; rDS(on): 0.0220 ohms ; Number of units in IC: 1

OM5260CSAV : 20 A, SILICON, RECTIFIER DIODE, TO-254AA Specifications: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 20000 mA ; Package: HERMETIC SEALED, METAL, TO-254AA, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

30CTQ045-005 : 30 A, 40 V, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; Package: TO-220, TO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

 
0-C     D-L     M-R     S-Z