Details, datasheet, quote on part number: 6FR
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => General Purpose/
TitleGeneral Purpose/
DescriptionStandard Recovery Diodes
CompanyInternational Rectifier Corp.
DatasheetDownload 6FR datasheet


Features, Applications


High surge current capability Avalanche types available Stud cathode and stud anode version Wide current range Types to 1200V VRRM

Battery charges Converters Power supplies Machine tool controls
Type number Voltage Code VRRM, maximum repetitive peak reverse voltage V
VRSM, maximum nonrepetitive peak reverse voltage V
(1) Avalanche version only available from VRRM to 1200V.

IF(AV) IF(RMS) PR IFSM Max. average forward current @ Case temperature Max. RMS forward current Maximum non-repetitive peak reverse power Max. peak, one-cycle forward, non-repetitive surge current I t

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial = TJ max.

V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage r

x I F(AV)), = TJ max. (16.7% x IF(AV) IF(AV)), = TJ max. x I F(AV)), = TJ max. Ipk= = 400µs rectangular wave

High level value of forward slope resistance
(2) Available only for Avalanche version, all other parameters the same as 6F.

Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, ± 10%

DC operation K/W Nm Mounting surface, smooth, flat and greased Lubricated threads (Not lubricated threads) g (oz) See Outline Table

(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

None = Standard diode 3 4 Current rating: Code = IF(AV) F = Standard device
None = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud)

Voltage code: Code 10 = VRRM (See Voltage Ratings table) None = Stud base M = Stud base 0.8 - (Not available for Avalanche diodes)


Some Part number from the same manufacture International Rectifier Corp.
6FR40 100V 6A Std. Recovery Diode in a DO-203AA (DO-4)package
6GBUSeries 6.0 Amp Single Phase Full Wave Bridge Rectifier
6TQ Schottky Rectifier 6 Amp
6TQ035 35V 6A Schottky Discrete Diode in a TO-220AC Package
6TQTQ035 Schottky Rectifier 6 Amp
70/300UR Standard Recovery Diodes
70300U Standard Recovery Diodes Stud Version
70CRU02 200V 35A Ultra-fast Doubler Diode in a TO-218 Package
70CRU04 400V 70A Ultra-fast Doubler Diode in a TO-218 Package
70EPF02 200V Fast Recovery Diode in a Powirtab Package
70EPF08 800V Fast Recovery Diode in a Powirtab Package
70EPS Input Rectifier Diode
70EPS08 800V 70A Std. Recovery Diode in a Powirtab (Short) Package
70HA100 Standard Recovery Diodes
Same catergory

2N1893 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 0.5A ;; HFE(min) = 30 ;; HFE(max) = - ;; @ Vce/ic = 5V / 1mA ;; FT = 50MHz ;; PD = 0.8W.

2SD2486 : NPN. Silicon NPN Triple Diffusion Planar Type ( For Power Amplification With High Forward Current Transfer Ratio ).

AQV234 : PhotoMOS Relays. VL Max. = 400V ;; Il Max. = 0.12A ;; On-resistance = 30ohm ;; Package = DIP6.

BC817-16LT1 : Silicon Transistor Plastic , Package: SOT-23 (TO-236), Pins=3. Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value Unit V mAdc Characteristic Total Device Dissipation FR­5 Board, = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, = 25°C Derate above 25°C Thermal Resistance,.

CSHD10-45L : 5 to 100 Amp. Power Schottky Rectifier 10 Amps, 45volts. : The CENTRAL SEMICONDUCTOR is a Silicon Power Schottky Rectifier designed for surface mount power applications requiring a low forward voltage drop. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage Average Rectified Forward Current (TC=120°C) Peak Forward Surge Current (tp=10ms).

EGL34J : 0.5 Amp Super Fast Recovery Rectifier 50 to 1000 Volts. High Current Capability Extremely Low Thermal Resistance For Surface Mount Application Higher Temp Soldering: 250 C for 10 Seconds At Terminals Minimelf Package Operating Temperature: +150 C Storage Temperature: +150 C Maximum Thermal Resistance: 5 C/W Junction to Lead Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward.

FDC602P : P-channel 2.5V Specified Powertrench ® MOSFET Advanced. This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage ­ 12V). Fast switching speed High performance trench technology for extremely low RDS(ON) Applications Battery management Load switch Battery protection.

PM600DVA060 : 600 Amp Intelligent Power Module For Flat-base Type Insulated Package.

T820067504DH : Style = Phase Control ;; Type = Disc/hockey Puk ;; Voltage = 600V ;; Current = 750A ;; Circuit Configuration = Single.

E9Z19M105JR : CAPACITOR, FILM/FOIL, MIXED (FILM+PAPER), 1 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: MIXED (FILM+PAPER) ; Capacitance Range: 1 microF ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: 70 C (158 F).

FHK4N60 : 4 A, 600 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 3 ohms ; PD: 33000 milliwatts ; Package Type: TO-220, TO-220F, 3 PIN ; Number of units in IC: 1.

LD056C335FAB4A : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X7R, 3.3 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.3 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 6.3 volts ; Mounting Style: Surface Mount Technology.

RN2103FT : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: 2-1B1A, TESM, 3 PIN.

RPL03T100F : RESISTOR, CURRENT SENSE, 0.125 W, 1 %, 200 ppm, 10 ohm, SURFACE MOUNT, 1005. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 01005, CHIP ; Resistance Range: 10 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating: 0.1250 watts (1.68E-4 HP) ; Operating.

SMP8527-101KLF : 1 ELEMENT, 1 uH, NICKEL-ZINC FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 1 microH ; Rated DC Current: 6680 milliamps ; Operating.

TTB6C95N16LOF : 75 A, 1600 V, SCR. s: VDRM: 1600 volts ; VRRM: 1600 volts ; IT(RMS): 75 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: ISOPACK-14 ; Pin Count: 14.

232273561209L : RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 100 ppm, 12 ohm, SURFACE MOUNT, 1218. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 12 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating:.

2S012R4 : 2 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: TO-53, 3 PIN.

2SC5200-R : 15 A, 230 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, 2-21F1A, 3 PIN.

51575R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

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