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Part: 7107
Category:
Description:
Company: International Rectifier Corp.
Datasheet: Download 7107 datasheet File size : 115 kB
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PD - 9.1099B
PRELIMINARY
IRF7107
N-CHANNEL MOSFET 1 8 2 3 4 7
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S1 G1 S2 G2
D1 D1 D2 D2
N-Ch
VDSS 20V
P-Ch
-20V
6 5
RDS(on) 0.125 0.160 ID 3.0A -2.8A
P-CHANNEL MOSFET
Top View
SO-8
Absolute Maximum Ratings
Max.
N-Channel ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2.0 0.016 ± 20 3.0 -55 to + 150 -1.3 P-Channel -2.8 -2.3 -10 A
V V/ns °C
Thermal Resistance
Parameter
RJA Junction-to-Ambient (PCB Mount)**
Min.
Typ.
Max.
62.5
Units
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 3
77
IRF7107
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 20 -20 -- -- -- N-Ch -- -- P-Ch -- N-Ch 1.0 P-Ch -1.0 N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-P N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-P -- N-P -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch -- P-Ch -- N-Ch P-Ch N-Ch P-Ch Typ. Max. -- -- -- -- 0.037 -- 0.015 -- -- 0.125 -- 0.250 -- 0.160 -- 0.300 -- -- -- -- 4.4 -- 3.3 -- -- 2.0 -- -2.0 -- 25 -- -25 -- ±100 9.1 25 11 25 1.2 -- 1.8 -- 2.5 -- 3.5 -- 5.0 15 12 40 10 20 19 40 29 50 42 90 22 50 42 63 4.0 -- 6.0 -- 300 -- 320 -- 260 -- 300 -- 62 -- 95 -- Units V V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage Forward Transconductance
V S
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
µA nA
Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 3.0A VGS = 4.5V, ID = 1.50A VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 15V, ID = 3.0A VDS = -15V, ID = -3A VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ =125°C VDS = -16V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 2.3A, VDS = 10V, VGS = 10V P-Channel ID = -2.3A, VDS = -10V, VGS = -10V N-Channel VDD = 20V, ID = 1.0A, RG = 6.0, RD = 20 P-Channel VDD = -20V, ID = -1.0A, RG = 6.0, RD = 20
nC
ns
nH
Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, = 1.0MHz
pF
P-Channel VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 1.7 -- -- -1.6 A -- -- 10 -- -- -10 -- 0.90 1.2 T J = 25°C, IS = 1.7A, VGS = 0V V -- -1.4 -1.6 T J = 25°C, IS = -1.3A, VGS = 0V -- 69 100 ns N-Channel -- 69 100 T J = 25°C, IF = 1.25A, di/dt = 100A/µs -- 58 120 nC P-Channel T J = 25°C, IF = -1.25A, di/dt = 100A/µs -- 64 96 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
N-Channel ISD 2.3A, di/dt 100A/µs, V DD V(BR)DSS, TJ 150°C P-Channel ISD -1.25A, di/dt 50A/µs, VDD V(BR)DSS, TJ 150°C Pulse width 300µs; duty cycle 2%.
78
IRF7107
100
I , Drain-to-Source Current (A) D
10
4.5V
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V
1
1
0.1 0.01
20µs PULSE WIDTH TJ = 25°C
0.1 1 10
A
100
0.1 0.01
20µs PULSE WIDTH TJ = 150°C
0.1 1 10 100
A
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
100
Fig 2. Typical Output Characteristics, TJ = 150oC
2.0
VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance (Normali zed)
I D = 3.0A
I D , Drain-to-Source Current (A)
1.5
TJ = 25°C TJ = 150°C
1.0
0.5
10 4 5 6 7
VDS = 15V 20µs PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
800
Fig 4. Normalized On-Resistance Vs. Temperature
20
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C is s = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
I D = 2.3A VDS = 10V
16
C, Capacitance (pF)
600
Coss
12
400
Ciss
8
200
Crss
4
0 1 10 100
A
0 0 2 4 6
FOR TEST CIRCUIT SEE FIGURE 11
8 10 12 14
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
79
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
IRF7107
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10
I D , Drain Current (A)
TJ = 150°C TJ = 25°C
10 1ms
10ms 1 10 0ms
1
0.1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
1.4
0.1
TA = 25°C TJ = 150°C Single Pulse
0.1 1 10 100
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
Fig 8. Maximum Safe Operating Area
2.5
ID, Drain Current (Amps)
2.0
1.5
1.0
0.5
Fig 10a. Switching Time Test Circuit
A
25 50 75 100 125 150
0.0
Fig 9. Maximum Drain Current Vs. Ambient Temperature
TA , Ambient Temperature (°C)
Fig 10b. Switching Time Waveforms
Fig 11a. Gate Charge Test Circuit
80
Fig 11b. Basic Gate Charge Waveform
IRF7107
100
-ID , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
10
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
-4.5V
-4.5V
1
1
0.1
0.1
0.01 0.01
20µs PULSE WIDTH TJ = 25°C A
0.1 1 10 100
0.01 0.01
20µs PULSE WIDTH TJ = 150°C
0.1 1 10
100
A
Fig 12. Typical Output Characteristics, TJ = 25oC
100
-VDS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics, TJ = 150oC
2.0
- VDS , Drain-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance (Normali zed)
I D = -2.8A
- ID , Drain-to-Source Current (A)
1.5
TJ = 25°C TJ = 150°C
10
1.0
0.5
1 4 5 6 7
VDS = -15V 20µs PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = -10V
100 120 140 160
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 14. Typical Transfer Characteristics
800
Fig 15. Normalized On-Resistance Vs. Temperature
20
-VGS , Gate-to-Source Voltage (V)
V G S = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rs s = C gd C oss = C ds + C gd
I D = -2.3A VDS = -10V
16
C, Capacitance (pF)
600
C oss Ciss
12
400
8
200
Crss
4
0 1 10 100
A
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 22
12 16 20
A
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage
81
Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage
Others parts begin by 71
71-1
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