Details, datasheet, quote on part number: 8CLJQ045
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => 5 to 100 Amp
Title5 to 100 Amp
DescriptionSchottky Rectifier
CompanyInternational Rectifier Corp.
DatasheetDownload 8CLJQ045 datasheet
Find where to buy


Features, Applications

Major Ratings and Characteristics IF(AV) Rectangular waveform VRRM (Per Leg) IFSM = 8.3ms half-sine (Per Leg) TJ =125C (Per Leg) 8CLJQ045 Units V A

Description/Features The 8CLJQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. Hermetically Sealed Center Tap Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long Term Reliability Surface Mount Lightweight

VR Max. DC Reverse Voltage (V) (Per Leg) VRWM Max. Working Peak Reverse Voltage (V) (Per Leg)

IF(AV) Max. Average Forward Current See Fig. 5 I FSM Max. Peak One Cycle Non - Repetitive Surge Current (Per Leg) 8.3 ms half-sine

V FM Max. Forward Voltage Drop (Per Leg) See Fig. 1Q

Max. Reverse Leakage Current (Per Leg) See Fig. 2 Q Max. Junction Capacitance (Per Leg) Typical Series Inductance (Per Leg)

25C ) Measured from center of cathode pad to center of anode pad

TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case (Per Leg) RthJC Max. Thermal Resistance, Junction to Case (Per Package) wt Weight (Typical) Die Size Case Style SMD-0.5 g mils 1.86 C/W DC operation

Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage (Per Leg)
Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)


Some Part number from the same manufacture International Rectifier Corp.
8EQ045 Schottky Rectifier
8ETH03 300V 8A Ultra-fast Discrete Diode in a TO-220AC Package
8ETH06 600V 8A Hyperfast Discrete Diode in a TO-220AC Package
8ETH06Series Hyperfast Rectifier
8ETL06 600V 8A Hyperfast Discrete Diode in a TO-220AC Package
8ETU04 400V 8A Ultra-fast Common Cathode Diode in a TO-220AB Package
8ETX06 600V 8A Hyperfast Discrete Diode in a TO-220AC Package
8EWF-S Surface Mountable Fast Soft Recovery Diode
8EWF02S 200V Fast Recovery Diode in a D-pak Package
8EWF10S 1000V Fast Recovery Diode in a D-pak Package
8EWS-S Surface Mountable Input Rectifier Diode
8EWS08S 800V 8A Std. Recovery Diode in a D-pakpackage
8GBUSeries 8.0 Amp Single Phase Full Wave Bridge Rectifier
8TQ Schottky Rectifier 8 Amp
8TQ080 80V 8A Schottky Discrete Diode in a TO-220AC Package
8TWS-S Phase Control SCR
90CLQ100 90A 100V Hi-rel Schottky Common Cathode Diode in a SMD-1 Package
90MT100KB 1000V 3 Phase Bridge in a Int-a-pak Package
90MT100KB Three Phase Bridge
90MT120KB 1000V 3 Phase Bridge in a Int-a-pak Package

IRFR120Z : 100V Single N-channel HexFET Power MOSFET in a D-pak Package

IRHM58Z60 : 30V 1000kRad Hi-rel Single N-channel Tid Hardened MOSFET in a TO-254AA Package

ST300C20L3L : Phase Control Thyristor

AHE2815SF/HB-MSTR : Advanced Analog Hybrid-high Reliability Dc/dc Converters

SD253N08S15PBV : FAST Recovery Diodes Stud Version

IRF7832TRPBF : Fet - Single Discrete Semiconductor Product 20A 30V 2.5W Surface Mount; MOSFET N-CH 30V 20A 8-SOIC Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 30V ; Current - Continuous Drain (Id) @ 25 C: 20A ; Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V ; Input Capacitance (Ciss) @ Vds: 4310pF @ 15V ; Power - Max: 2.5W ; Packaging: Cut

IRG4BC15UD-STRRPBF : 14 A, 600 V, N-CHANNEL IGBT, TO-262AA Specifications: Polarity: N-Channel ; Package Type: TO-262, 3 PIN ; Number of units in IC: 1

IRHSLNA57Z60 : 75 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0061 ohms ; Package Type: SMD2, 3 PIN ; Number of units in IC: 1

Same catergory

2SC3904 : High-Frequency for Tuners. VCEO(V) = 10 ;; IC(A) = 0.065 ;; HFE(min) = 50 ;; HFE(max) = 300 ;; Package = Mini3-G1.

BSP324 : N-channel Sipmos Small-signal Transistor. SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) 1.52.5 V Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 Unit V Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient.

IRFWI510A : Advanced Power MOSFET. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25.

JANTX1N823 : TC Reference Voltage Zener: (do35).

PP600D120 : IGBT Assemblies (POW-R-PAK). Voltage = 1200V ;; Current = 600A ;; Circuit Configuration = Half Bridge.

PTF10149 : 70 Watts, 921-960 MHZ Goldmos Field Effect Transistor. The PTF is an internally matched 70watt GOLDMOS FET intended for cellular and GSM amplifier applications from to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power.

SB10-18K : . Schottky Barrier Diode (Twin Type Cathode Common) Applications High frequency rectification (switching regulators, converters, choppers). Low forward voltage (VF=0.85V max). Fast reverse recovery time (trr=35ns max). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. s Parameter Repetitive Peak Reverse.

PMEG3020CEP : 2 A Low VF MEGA Schottky Barrier Rectifier Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package..

03028-BR103AKZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.01 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

D2232UKG4 : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; Package Type: ROHS COMPLIANT, CERAMIC, F-0127, 8 PIN ; Number of units in IC: 1.

DB24601 : 3 A, 60 V, SILICON, RECTIFIER DIODE. s: Package: HALOGEN FREE AND ROHS COMPLIANT, TMINIP2-F2-B, 2 PIN ; Number of Diodes: 1 ; VRRM: 60 volts ; IF: 3000 mA ; trr: 0.0210 ns.

F601BV104K1K0L : CAPACITOR, METALLIZED FILM, 1000 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Through Hole ; Operating Temperature: -55 to 85 C (-67.

ISL23315TFUZ-T : 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO10. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT, PLASTIC, MO-187BA, MSOP-10 ; Operating Temperature: -40 to 125 C (-40 to 257 F).

ML426RAT13NGLC : 1 ELEMENT, 0.013 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Air ; Lead Style: FLAT ; Application: General Purpose, RF Choke ; Inductance Range: 0.0130 microH ; Rated DC Current: 4000 milliamps ; Operating Temperature: -55 to 155 C (-67 to 311 F).

UTD351-AE3-R : 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.1600 ohms ; PD: 500 milliwatts ; Package Type: SOT23, SOT-23, 3 PIN ; Number of units in IC: 1.

Y1453120R000F0L : RES,RADIAL,METAL FOIL,120 OHMS,300WV,1% +/-TOL,-.2,.2PPM TC,3011 CASE. s: Category / Application: General Use.

2N5912C : 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; Package Type: HERMETIC SEALED, TO-71, 6 PIN ; Number of units in IC: 2.

2SAR512PT100 : 2000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ROHS COMPLIANT, MPT3, 3 PIN.

8R47MAM0511NP000 : CAP,AL2O3,470NF,100VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

0-C     D-L     M-R     S-Z