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Part: 8ETH03-1
Category:
Description: 300V 8A Ultra-fast Discrete Diode in a TO-262 Package
Company: International Rectifier Corp.
Datasheet: Download 8ETH03-1 datasheet File size : 156 kB
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Bulletin PD-20023 rev. C 09/01
8ETH03 8ETH03S 8ETH03-1
Ultrafast Rectifier
Features
· · · · Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
trr = 35ns IF(AV) = 8Amp VR = 300V
Description/ Applications International Rectifier's 300V series are the state of the art Ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and Ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
VRRM IF(AV) IFSM TJ, TSTG Repetitive Peak Reverse Voltage Average Rectified Forward Current Non Repetitive Peak Surge Current @T @T
C J
Max
300 = 155°C = 25°C 8 100 - 65 to 175
Units
V A °C
Operating Junction and Storage Temperatures
Case Styles
8ETH03
8ETH03S
8ETH03-1
Base Cathode
Base Cathode
2
2
1
3
1
3
1
3
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC www.irf.com
D2PAK
TO-262 1
8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
300 1.0 1.25 V V V µA µA pF nH I R = 100µA I F = 8A I F = 8A, TJ = 125°C V R = VR Rated T J = 125°C, VR = VR Rated V R = 300V Measured lead to lead 5mm from package body
0.83 1.00 0.02 6.0 31 8 20 200 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
27 40 2.2 5.3 30 106 35 nC A ns I F = 1A, diF/dt = -50A/µs, VR = 30V TJ = 25°C TJ = 125°C T J = 25°C TJ = 125°C T J = 25°C TJ = 125°C IF = 8A diF /dt = - 200A/µs VR = 200V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ T Stg RthJC RthJA ! RthCS
"
Min
- 65 - 65 Per Leg Per Leg -
Typ
1.45 0.2 2.0 0.07 -
Max
175 175 2.5 70 12 10
Units
°C
Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heatsink Weight
°C/W
g (oz) Kg-cm lbf.in
Mounting Torque
6.0 5.0
! Typical Socket Mount "# Mounting Surface, Flat, Smooth and Greased
2
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8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
100
Reverse Current - I R (µA)
1000 100 10 1 0.1
25°C Tj = 175°C 150°C 125°C 100°C
Instantaneous Forward Current - I F (A)
0.01 0.001 0
10
50
100
150
200
250
300
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000
Junction Capacitance - C T (pF)
T J = 25°C
Tj = 175°C Tj = 125°C Tj = 25°C
100
1 0.4
10
0.6 0.8 1 1.2 1.4 1.6 1.8 2
0
50
100
150
200
250
300
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
10
(°C/W)
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
1
Thermal Impedance Z
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2
thJC
PDM
t1 t2
0.1
. .
0.01 0.00001
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
180
Allowable Case Temperature (°C) Average Power Loss ( Watts )
10 8 6 4 2 0
0 2 4 6 8 10 12 14
RMS Limit
170
DC
160 150
Square wave (D = 0.50) Rated Vr applied
DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
140
see note (3)
130
Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
0
2
4
6
8
10
12
Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics
100
1000
Qrr ( nC )
If = 8A, Tj = 125°C
trr ( ns )
If = 8A, Tj = 125°C
100
If = 8A, Tj = 25°C
If = 8A, Tj = 25°C
10 100
di F /dt (A/µs )
1000
10 100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery vs. di F /dt
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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8ETH03, 8ETH03S, 8ETH03-1
Bulletin PD-20023 rev. C 09/01
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T.
di F /dt dif/dt ADJUST
D G IRFP250 S
Fig. 1 - Reverse Recovery Parameter Test Circuit
3
IF 0
trr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
di fF/dt /dt
1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
Fig. 2 - Reverse Recovery Waveform and Definitions
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5
Others parts begin by 8e
8E-1
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