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Part: 8ETH06Series
Category:
Discrete
-> Diodes & Rectifiers
-> Fast Recovery Diodes
Description: Hyperfast Rectifier
Company: International Rectifier Corp.
Datasheet: Download 8ETH06Series datasheet File size : 156 kB
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Datasheet text preview:
Bulletin PD-20746 rev. D 03/03
8ETH06 8ETH06S 8ETH06-1 8ETH06FP
Hyperfast Rectifier
Features
· · · · · Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature UL E78996 approved
trr = 18ns typ. IF(AV) = 8Amp VR = 600V
Description/ Applications State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
V RRM IF(AV) IFSM IFM TJ, TSTG Peak Repetitive Reverse Voltage Average Rectified Forward Current@ TC = 144°C @ TC = 118°C (FULLPACK) Non Repetitive Peak Surge Current @ TJ = 25°C (FULLPACK) Peak Repetitive Forward Current Operating Junction and Storage Temperatures 90 100 16 - 65 to 175 °C
Max
600 8
Units
V A
Case Styles
8ETH06
8ETH06S
8ETH06-1
8ETH06FP
Base Cathode
2
Base Cathode
2
2
1
1 3
3
1
3
1
3
Cathode
Anode
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC www.irf.com
D PAK
2
TO-262
TO-220 FULLPACK 1
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 rev. D 03/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
600 2.0 1.3 0.3 55 17 8.0 2.4 1.8 50 500 V V V µA µA pF nH IR = 100µA IF = 8A, TJ = 25°C IF = 8A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 600V Measured lead to lead 5mm from package body
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
18 20 25 40 2.4 4.8 25 120 33 12 220 22 25 ns A nC TJ = 125°C nC A ns IF = 1A, diF/dt = 100A/µs, VR = 30V IF = 8A, diF/dt = 100A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 8A diF /dt = 600A/µs VR = 390V IF = 8A diF /dt = 200A/µs VR = 390V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
trr IRRM Qrr
Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ TStg RthJC RthJA ! RthCS " Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heatsink Weight Mounting Torque Per Leg Per Leg (Fullpack) Per Leg
Min
- 65 6.0 5.0
Typ
1.4 0.5 2.0 0.07 -
Max
175 175 2 3.7 70 12 10
Units
°C °C/W
g (oz) Kg-cm lbf.in
! Typical Socket Mount " Mounting Surface, Flat, Smooth and Greased
2
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8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 rev. D 03/03
00
1000
T J = 175°C
Reverse Current - I R (µA)
100 10 1 0.1
150°C 125°C 100°C
Instantaneous Forward Current - I F (A)
25°C
10
0.01
T = 175°C J T = 150°C J T = 25°C J
0.001 0 100 200 300 400 500 600
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000
1
Junction Capacitance - C T (pF)
T J = 25°C
100
0.1 0 1 2 3 4
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
10 0 100 200 300 400 500 600
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) Notes:
PDM
t1 t2
0.1
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
.01 0.00001
0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
1
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3
8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 rev. D 03/03
10
(°C/W)
thJC
1
Thermal Impedance Z
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thJC Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
170 160
DC
160 140 120 100 80
Square wave (D = 0.50) Rated Vr applied see note (3)
DC
150 140 Square wave (D = 0.50)
Rated Vr applied
130
see note (3)
120 0 2 4 6 8 10 12
Average Forward Current - IF(AV) (A) Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current
0
2
4
6
8
10
12
14
Average Forward Current - IF(AV) (A) Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK)
20
Average Power Loss ( Watts )
18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12
Average Forward Current - IF(AV) (A) Fig. 8 - Forward Power Loss Characteristics
RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 8); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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8ETH06, 8ETH06S, 8ETH06-1, 8ETH06FP
Bulletin PD-20746 rev. D 03/03
60
IF = 16 A IF = 8 A
400 350 300
V R = 390V T J = 125°C T J = 25°C
50
IF = 16 A IF = 8 A
Qrr ( nC )
V R = 390V T J = 125°C T J = 25°C
40
trr ( ns )
250 200 150 100
30
20 50 0 100
10 100
1000
1000
di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt
di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. di F /dt
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T. dif/dt ADJUST
diF /dt
D G IRFP250 S
Fig. 11- Reverse Recovery Parameter Test Circuit
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5
Others parts begin by 8e
8E-1
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