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Details, datasheet, quote on part number:8ETL06
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Datasheet text preview:
Bulletin PD-20698 rev. B 02/04
8ETL06 8ETL06S 8ETL06-1 8ETL06FP
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC
Features
· · · · · · Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature Fully Isolated package (VINS = 2500 VRMS) UL E78996 approved
VF = 0.96V typ. IF(AV) = 8Amp VR = 600V
Description
State of the art, ultra-low VF, soft-switching Hyperfast Rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimised conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
Applications
AC-DC SMPS 70W-400W e.g. Laptop & Printer AC Adaptors, Desktop PC, TV & Monitor, Games units and DVD AC-DC power supplies.
Absolute Maximum Ratings Parameters
VR R M IF(AV) IFSM IFM TJ, TSTG Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 160°C @ TC = 142°C (FULLPACK) Non Repetitive Peak Surge Current @ TJ = 25°C Peak Repetitive Forward Current Operating Junction and Storage Temperatures 175 16 - 65 to 175 °C
Max
600 8
Units
V A
Case Styles
8ETL06
8ETL06S
8ETL06-1
8ETL06FP
Base Cathode
2
Base Cathode
2
2
1
1
3
Cathode
3
1
3
Anode
N/C
Anode
1
N/C
Anode
3
Cathode
Anode
TO-220AC www.irf.com
D2PAK
TO-262
TO-220 FULLPACK 1
8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max
600 -
nits Test Conditions
V V V µA µA pF nH IR = 100µA IF = 8A, TJ = 25°C IF = 8A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 600V Measured lead to lead 5mm from package body
0.96 1.05 0.81 0.86 0.05 20 17 8.0 5 100 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
60 150 170 250 15 20 1.3 2.6 100 250 µC A ns IF = 1A, diF/dt = 100A/µs, VR = 30V IF = 8A, diF/dt = 100A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 8A diF /dt = 200A/µs VR = 390V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ TStg RthJC Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Per Leg
Min
- 65 -
Typ
1.4 3.4 0.5 2.0 0.07 -
Max
175 175 2 4.3 70 12 10
Units
°C
°C/W
Fullpack (Per Leg) RthJA RthCS Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heatsink Weight Per Leg
U
g (oz) Kg-cm lbf.in
Mounting Torque
6.0 5.0
Typical Socket Mount Mounting Surface, Flat, Smooth and Greased
2
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8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
100
100 10 1 0.1 0.01
Tj = 175°C
150°C 125°C 100°C 75°C 50°C 25°C
Instantaneous Forward Current - I F (A)
10
T = 175°C J T = 150°C J T = 25°C J
Reverse Current - I R (µA)
0.001 100
200
300
400
500
600
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
100
Junction Capacitance - C T (pF)
T J = 25°C
1
0.1 0.4
0.8
1.2
1.6
2
10
0
100
200
300
400
500
600
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
1
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3
8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
10
Thermal Impedance Z thJC (°C/W)
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2
0.1
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thJC Characteristics (FULLPACK)
0.0001
100
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
175 170 165 160 155 150
see note (3)
Square wave (D = 0.50) Rated Vr applied
160
DC
140 120
DC
Square wave (D = 0.50) Rated Vr applied
100 see note (3) 80
0
2
4
6
8
10
12
14
0
Average Forward Current - IF(AV) (A) Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current
2 4 6 8 10 12 14 Average Forward Current - IF(AV) (A)
Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK)
12
Average Power Loss ( Watts )
10 8 6 4 2 0
RMS Limit DC D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 8); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
0
Average Forward Current - IF(AV) (A)
2
4
6
8
10
12
Fig. 8 - Forward Power Loss Characteristics
4
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8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
450 400 350 300
Qrr ( nC ) trr ( ns )
IF = 16 A IF = 8 A
5000 4500 4000 3500 3000 2500 2000 1500
V R = 390V T J = 125°C T J = 25°C
IF = 16 A IF = 8 A
250 200 150 100 50 0 100
1000 1000
di F /dt (A/µs )
V R = 390V T J = 125°C T J = 25°C
500 100
di F /dt (A/µs )
1000
Fig. 9 - Typical Reverse Recovery vs. di F /dt
Fig. 10 - Typical Stored Charge vs. di F /dt
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T.
diF /dt
dif/dt ADJUST
D G IRFP250 S
Fig. 11- Reverse Recovery Parameter Test Circuit
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5
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