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Part: 8ETX06FP
Category:
Description: 600V 8A Hyperfast Discrete Diode in a TO-220 Fullpack Package
Company: International Rectifier Corp.
Datasheet: Download 8ETX06FP datasheet File size : 156 kB
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Datasheet text preview:
Bulletin PD-20766 rev. B 02/04
8ETX06 8ETX06S 8ETX06-1 8ETX06FP
Hyperfast Rectifier
Features
· · · · · Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature UL E78996 approved
trr = 15ns typ. IF(AV) = 8Amp VR = 600V
Description/ Applications State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
VRRM IF(AV) IFSM IFM TJ, TSTG Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 143°C @ TC = 106°C (FULLPACK) Non Repetitive Peak Surge Current @ TJ = 25°C Peak Repetitive Forward Current Operating Junction and Storage Temperatures 110 18 - 65 to 175 °C
Max
600 8
Units
V A
Case Styles
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Base Cathode
2
Base Cathode
2
2
1
1
3
Cathode
3
1
3
Anode
N/C
Anode
1
N/C
Anode
3
Cathode
Anode
TO-220AC www.irf.com
D2PAK
TO-262
TO-220 FULLPACK 1
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. B 02/04
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
600 2.3 1.4 0.3 35 17 8.0 3.0 1.7 50 500 V V V µA µA pF nH IR = 100µA IF = 8A, TJ = 25°C IF = 8A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 600V Measured lead to lead 5mm from package body
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
15 16 17 40 2.3 4.5 20 100 31 12 195 19 24 ns A nC TJ = 125°C nC A ns IF = 1A, diF/dt = 100A/µs, VR = 30V IF = 8A, diF/dt = 100A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 8A diF /dt = 600A/µs VR = 390V IF = 8A diF /dt = 200A/µs VR = 390V
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
trr IRRM Qrr
Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
TJ T Stg RthJC RthJA RthCS Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heatsink Weight Mounting Torque Per Leg Per Leg (Fullpack) Per Leg
Min
- 65 6.0 5.0
Typ
1.4 3.4 0.5 2.0 0.07 -
Max
175 175 2 4.3 70 12 10
Units
°C °C/W
g (oz) Kg-cm lbf.in
Typical Socket Mount Mounting Surface, Flat, Smooth and Greased
2
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8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. B 02/04
100
Reverse Current - I R (µA)
1000 100 10 1 0.1 0.01
T J = 175°C 150°C 125°C 100°C
25°C
Instantaneous Forward Current - I F (A)
10
T J = 175°C T = 150°C J T = 25°C J
0.001 0 0 100 200 300 400 500 600
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000
1
Junction Capacitance - C T (pF)
T = 25°C
J
100
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
10
0
100
200
300
400
500
600
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
1
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3
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. B 02/04
10
Thermal Impedance Z thJC (°C/W)
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
PDM
t1 t2
0.1
Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (Seconds) Fig. 5 - Max. Thermal Impedance Z thJC Characteristics (FULLPACK)
180
Allowable Case Temperature (°C) Allowable Case Temperature (°C)
180 160 140 120 100 80 Rated Vr applied 60 40 0
see note (3) Square wave (D = 0.50)
170 160 150 140 Square wave (D = 0.50)
Rated Vr applied
DC
DC
130 120
see note (3)
0
2
4
6
8
10
12
2
4
6
8
10
12
Average Forward Current - IF(AV) (A) Fig. 6 - Max. Allowable Case Temperature Vs. Average Forward Current
Average Forward Current - IF(AV) (A) Fig. 7 - Max. Allowable Case Temperature Vs. Average Forward Current (FULLPACK)
20
Average Power Loss ( Watts )
18 16 14 12 10 8 6 4 2 0 0 2 4 6 8
DC D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 8); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
RMS Limit
Average Forward Current - IF(AV) (A)
10
12
14
Fig. 8 - Forward Power Loss Characteristics
4
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8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. B 02/04
50
300
V R = 390V T J = 125°C T J = 25°C
250 40
IF = 8 A IF = 16 A
200
Qrr ( nC )
IF = 16 A
trr ( ns )
30
150 100
IF = 8 A
20
V R = 390V T J = 125°C T J = 25°C
IF = 16 A
IF = 16 A
50
IF = 8 A
IF = 8 A
10 100
1000
0 100
1000
di F /dt (A/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt
di F /dt (A/µs ) Fig. 10 - Typical Stored Charge vs. di F /dt
Reverse Recovery Circuit
VR = 200V
0.01 L = 70µH D.U.T.
diF /dt
dif/dt ADJUST
D G IRFP250 S
Fig. 11- Reverse Recovery Parameter Test Circuit
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5
Others parts begin by 8e
8E-1
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