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Details, datasheet, quote on part number:8EWF10S
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| Part: | 8EWF10S |
| Category: | Discrete => Diodes & Rectifiers => Fast Recovery Diodes |
| Description: | 1000V Fast Recovery Diode in a D-pak Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download 8EWF10S datasheet File size : 156 kB |
| Request For quote: | Find where to buy 8EWF10S
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Datasheet text preview:
I2126 rev. B 10/99
QUIETIR Series 8EWF..S
SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF trr < 1.3V @ 8A = 80ns
VRRM 1000 to 1200V
Description/Features
The 8EWF..S fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: Output rectification and freewheeling diode in inverters, choppers and converters. Input rectifications where severe restrictions on conducted EMI should be met.
Major Ratings and Characteristics Characteristics
IF(AV) Sinusoidal waveform VRRM IFSM VF trr TJ @ 8 A, TJ = 25°C @ 1A, 100A/µs range
Package Outline Units
A V A V ns °C
8EWF..S
8 1000 to 1200 170 1.3 80 - 40 to 150
TO-252AA (D-Pak)
1
8EWF..S QUIETIR Series
I2126 rev. B 10/99
Voltage Ratings
Part Number VRRM, maximum peak reverse voltage V
8EWF10S 8EWF12S 1000 1200
VRSM , maximum non repetitive peak reverse voltage V
1100 1300
IRRM 150°C mA
4
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IFSM It I t
2 2
8EWF..S
8 170 200 144 200
Units
A A A2 s A s
2
Conditions
@ TC = 94° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied
Max. Peak One Cycle Non-Repetitive Surge Current Max. I t for fusing Max. I t for fusing
2 2
2000
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop rt Forward slope resistance
8EWF..S
1.3 25.6 0.93 0.1 4
Units
V m V mA
Conditions
@ 8A, TJ = 25°C TJ = 150°C TJ = 25 °C TJ = 150 °C
VF(TO) Threshold voltage IRM Max. Reverse Leakage Current
VR = rated VRRM
Typical Reverse Recovery Characteristics
Parameters
trr Irr Qrr S Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Typical Snap Factor tb/ta
8EWF..S
270 4.2 1 0.6
Units
ns A µC -
Conditions
I F @ 8Apk @ 25A/µs @ T J = 25°C
di dt Ir r IFM
tr r
ta tb Qr r t
2
8EWF..S QUIETIR Series
I2126 rev. B 10/99
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Soldering Temperature RthJC Max. Thermal Resistance Junction to Case RthJA Typ. Thermal Resistance Junction to Ambient (PCB Mount)** wt T Approximate Weight Case Style 1(0.03) g (oz.)
8EWF..S
- 40 to 150 - 40 to 150 240 2.5 50
Units
°C °C °C °C/W °C/W
Conditions
for 10 seconds DCoperation
TO-252AA (D-Pak)
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994
M axim um Allowable Case Temperature (°C)
1 40 1 30 1 20
8EWF ..S Series R thJC(DC) = 2.5 °C/W
Maxim um Allowable Case Temperat ure (°C)
1 50
1 50 1 40 1 30 1 20 1 10 1 00 90 80 70 60 0 2 4 6 8 10 12 14 Average Forward Current (A) 3 0° 60 ° 9 0° 120 ° 180 ° DC
C ondu cti on Period
8 EWF..S Series R thJC (DC) = 2.5 °C/W
Conducti on Angle
1 10 1 00 90 80 70 60 0 1 2 3 4 5 6 7 8 9 Aver age Forward Current (A) 30° 6 0° 90° 12 0° 18 0°
Fig. 1 - Current Rating Characteristics
M aximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° RMS Limit 6 4 2 0 0 1 2 3 4 5 6 7 8 9 Av era ge Forward Current (A)
Cond ucti on Angle
Fig. 2 - Current Rating Characteristics
Maxim um Average Forward Power Loss (W) 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average Forward Current (A) RM S Limit
Condu cti on Period
12 10 8
DC 1 80° 1 20° 90° 60° 30°
8EWF ..S Series T J = 150°C
8EWF ..S Series T J = 150°C
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
3
8EWF..S QUIETIR Series
I2126 rev. B 10/99
180 170 160 150 140 130 120 110 100 90 80 1 10 10 0
Numbe r Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With Rated VR RM Applied Following Surge.
2 00 1 90 1 80 1 70 1 60 1 50 1 40 1 30 1 20 1 10 1 00 90 80 0 .0 1
Maximum Non Repetitive Surge Current Versus Pulse Train Duration.
Init ial TJ = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
In it ial TJ = 150°C No Voltage Reapplied Rat ed VRRM Reapplied
8E WF ..S Series
8EW F..S Series
0 .1 Pu lse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
1 0 00 Inst ant aneous Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ = 25°C 10 0 T J= 150°C
10
8E WF..S Series 1 0.5 1 1. 5 2 2 .5 3 3 .5 4 4.5
Inst an t aneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Reverse Recovery Time - Trr (µs)
Maxim um Reverse Recovery Time - Trr (µs) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 12 0 16 0 20 0 Rate Of Fall Of Forward Current - di/dt (A/µs)
I FM = 10 A 8A 5A 2A 1A
0. 8 8 EWF..S Series T J = 150 °C 0. 6
8 EWF..S Series T J = 25 °C
0. 4
I FM = 10 A 8A 5A 2A 1A
0. 2
0 0 40 80 12 0 16 0 20 0 Rat e Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25°C
Fig. 9 - Recovery Time Characteristics, TJ = 150°C
4
8EWF..S QUIETIR Series
I2126 rev. B 10/99
Maximum Reverse Recovery Charge - Qrr (µC)
M aximum Reverse Recovery Charge - Qrr (µC)
2 8 EWF..S Series T J = 25 °C 1 .6
8A I F M = 10 A
5 8EWF..S Series T J = 150 °C 4
8A I F M = 10 A
1 .2
5A
3
5A
0 .8
2A
2
2A
0 .4
1A
1
1A
0 0 40 80 120 16 0 20 0 Rate Of Fall Of Forward Current - di/dt (A/µs)
0 0 40 80 120 160 20 0 Rat e Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25°C
Max im um Reverse Recovery Current - Irr (A) 20 8EWF..S Series T J = 25 °C 16
I FM = 10 A 8A 5A 2A
Fig. 11 - Recovery Charge Characteristics, TJ = 150°C
Maximum Reverse Recovery Current - Irr (A) 25 8EW F..S Series T J = 150 °C 20
8A I FM = 10 A
12
15
5A 2A
8
1A
10
1A
4
5
0 0 40 80 120 16 0 20 0 Rat e Of Fall Of Forward Current - di/dt (A/µs)
0 0 40 80 120 1 60 2 00 Rat e Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25°C
T ransient Thermal Impedance Z thJC(°C/W) 10
Fig. 13 - Recovery Current Characteristics, T J = 150°C
Stead y State Value (DC Operation)
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Sing le Pulse
8E WF..S Series 0.1 0.0 00 1 0.0 01 0 .01 Squ are Wave Pulse Duration (s) 0 .1 1
Fig. 14 - Thermal Impedance ZthJC Characteristics
5
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