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Details, datasheet, quote on part number:FD200H02A5B
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Datasheet text preview:
Preliminary Data Sheet PD-20994 rev. A 06/01
FD200H02A5B
Fred Die in Wafer Form
a c
0.35 ± 0.01 (0.014 ± 0.0004)
NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
C b d A
2. CONTROLLING DIMENSION (INCH): 3. DIMENSIONS AND TOLERANCES: a = 5.080 ± 0.05 (0.200 ± 0.002) b = 5.08 ± 0.05 (0.200 ± 0.002) c = 4.420 ± 0.003 (0.174 ± 0.0001) d = 4.420 ± 0.003 (0.174 ± 0.0001) 4. LETTER DESIGNATION: A = Anode (Top Metal) C = Cathode (Back Metal) 5. SAWING: Recommended Blade SEMITEC S1025 QS00 Blade 6. MINIMUM ORDER QUANTITY: 300 die
40 (1.57)
Wafer flat alligned with side b of the die
Ø 125 (4.92)
NOT TO SCALE
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FD200H02A5B
Preliminary Data Sheet PD-20994 rev. A 06/01
Electrical Characteristics (Wafer Form)
Parameters
VFM VFM V RRM IRM t rr Maximum Forward Voltage Maximum Forward Voltage Mimunum Reverse Breakdown Voltage Ma x. Reverse Leakage Current Typ. Reverse Recovery Time
Units
1.13 V 1.08 V 200 V 50 µA 35 ns
Test Conditions
TJ = 25°C, I F = 150 A TJ = 25°C, I F = 60 A TJ = 25°C, I RRM = 100 µA TJ = 25°C, V RRM = 200 V I F = 1A, di/ dt = 100A/µs, V R = 30 V ( P o wI R t a b ) (TO-247)
Mechanical Data
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Reject Ink Dot Size Recommended Storage Environment Cr - Ni - Ag (1 KA - 2 KA - 3 KA) 99% Al, 1% Si (3 microns) 0.200" x 0.200" (see drawing) 0.25 mm diameter minimum Storage in original container, in dessicated nitrogen, with no contamination
Ordering Information Table
Device Code
FD
1 1 2 3 4 5 6 7 Fred Die
200
2
H
3
02
4
A
5
5
6
B
7
Chip Dimension in Mils: Process Voltage code Vrrm (*100) eg: Chip surface metallization: Wafer diameter in inches Packaging:
200 = 200x200 square H = HyperFast
02 = 200V A = Aluminium (anode), Silver (cathode)
B
= Inked Probed Unsawn Wafer (Wafer in box)
2
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