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Details, datasheet, quote on part number:IR01HD224-P2
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Datasheet text preview:
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE
Features
· Output Power MOSFETs in half-bridge configuration · 500V rated breakdown voltage · High side gate drive designed for bootstrap · · · · ·
operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD
Product Summary
VIN (max) ton/off trr RDS(on) 250V- 214/224 500V - 420 130 & 90 ns 260 ns 2.0 - H214 1.1 - H224 3.0 - H420 2.0W 4.0W - P2
Description
The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use.
PD(TA = 25oC)
Packages
Typical Connection
HV DC Bus
VIN
D1
NOTE: D1 is not required for the HD type
6
Vcc H IN L IN
1
Vcc
VB
2
H IN
VIN
VO
9
3
L IN
7
COM
TO LOAD
4
COM
1
IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VIN VB VO VIH/VIL VCC dV/dt PD RTHJA RTHJC TJ TS TL High Voltage Supply
Definition
214/224 420 High Side Floating Supply Absolute Voltage Half-Bridge Output Logic Input Voltage (HIN & LIN) Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt Package Power Dissipation @ TA +25oC - P2 Thermal Resistance, Junction to Ambient - P2 Thermal Resistance, Junction to Case (heatsink) Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) - P2 214/224 420
Min.
-0.3 -0.3 -0.3 -0.3 -0.3 - 0.3 -0.3 -- -- -- -- -55 -55 --
Max.
250 500 275 525 VIN + 0.3 Vcc + 0.3 25 3.50 2 4.0 60 30 20 150 150 300
Units
V
V V V V/ns W W °C/W
o
W
C/W °C
o
°C/W C
°C
2
IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions.
Symbol
VB VIN VO VCC VIH/VIL TA Id High Voltage Supply
Definition
High Side Floating Supply Absolute Voltage 214/224 420 Half-Bridge Output Voltage Low Side and Logic Fixed Supply Voltage Logic Input Voltage (HIN & LIN) Ambient Temperature Continuous Drain Current (TA = 25oC) 214 214-P2 224 224-P2 420 420-P2 (TA = 85 oC) 214 214-P2 224 224-P2 420 420-P2 (TC = 25oC) 214-P2 224-P2 420-P2 214/224 420
Min.
VO + 10 -- -- (note 1) -- 10 0 -40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Max.
VO + 20 250 500 250 500 20 VCC 125 0.85 1.4 1.1 1.9 0.7 1.1 0.55 0.9 0.7 1.4 0.5 0.8 1.7 2.3 1.4
Units
V V V V V
V
oC
A
A
A
Note 1:
Logic operational for VO of -5 to 250V (214/224) and 500V (420). Logic state held for V0 of -5 to -VB
3
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