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Details, datasheet, quote on part number: IRF250
 
 
Part numberIRF250
CategoryDiscrete
Description200V Single N-channel Hi-rel MOSFET in a TO-204AE Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRF250 datasheet
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Specifications, Features, Applications

IRF250 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL

The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ID @ VGS ID @ VGS = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical)

BVDSS BV DSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance

IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled LS + LD.
RthJC R thJA Junction to Case Junction to Ambient



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JANTX2N6766   JANTXV2N6766  


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