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Part: IRF3707ZS
Category:
Description: 30V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRF3707ZS datasheet File size : 120 kB
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Datasheet text preview:
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET
IRF3707Z IRF3707ZS IRF3707ZL
Qg
9.7nC
PD - 95812A
VDSS RDS(on) max
30V 9.5m :
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3707Z
D2Pak IRF3707ZS
TO-262 IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS V GS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TS T G Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V
Max.
30
Units
V A
g @ 10V g
i 42i
59 230 57 28
± 20
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
W W/°C °C
0.38 -55 to + 175 300 (1.6mm from case) 10 lbfxin (1.1 Nxm)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Typ.
Max.
2.653 62 40
Units
°C/W
eÃ
e
0.50
Junction-to-Ambient (PCB Mount)
h
Notes through are on page 12
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1
12/4/03
IRF3707Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 1.35 81 0.023 7.5 10 1.80 -5.3 9.7 2.8 1.0 3.4 2.5 4.4 6.2 9.8 41 12 3.6 1210 260 130 9.5 12.5 2.25 1.0 150 100 -100 15 pF VGS = 0V VDS = 15V ns nC nC VDS = 15V VGS = 4.5V ID = 17A S nA V mV / °C µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A
e e
VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 17A
See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 17A Clamped Inductive Load
e
= 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche Currentà Repetitive Avalanche Energy Typ. Max. 40 23 5.7 Units mJ A mJ
14 5.2
Diode Characteristics
Parameter
IS ISM VSD t rr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
59
i
Conditions
MOSFET symbol
D
A 230 1.0 21 7.8 V ns nC
showing the integral reverse
G S
p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V TJ = 25°C, IF = 17A, VDD = 15V di/dt = 100A/µs
e
e
2
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IRF3707Z/S/L
1000
T OP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
1000
T OP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
30V 10
10
3.0V
1 0.1 1
30µs PULSE WIDTH Tj = 25°C 10
1 0.1 1
30µs PULSE WIDTH Tj = 175°C 10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID, Drain-to-Source Current ()
ID = 42A VGS = 10V
1.5
T J = 25°C 100 T J = 175°C
1.0
10.0 2 3 4
VDS = 10V 30µs PULSE WIDTH 5 6 7 8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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