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Part: IRF3708STRL
Category:
Discrete
Description: 30V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRF3708STRL datasheet File size : 120 kB
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Datasheet text preview:
PD - 93938B
SMPS MOSFET
Applications
l
IRF3708 IRF3708S IRF3708L
HEXFET® Power MOSFET
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power
VD S S
30V
RDS(on) max
12m
ID
62A
l
Benefits
l l l
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3708 D2Pak IRF3708S TO-262 IRF3708L
Absolute Maximum Ratings
Symbol
V DS VGS ID @ TC = 25°C ID @ TC = 70°C I DM PD @TC = 25°C PD @TC = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 ±12 62 52 248 87 61 0.58 -55 to + 175
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)*
Typ.
0.50
Max.
1.73 62 40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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1
8/22/00
IRF3708/3708S/3708L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 Static Drain-to-Source On-Resistance Gate Threshold Voltage 0.6 Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. 0.028 8 9.5 14.5 Max. Units V V/°C 12.0 13.5 m 29 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, I D = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qg s Qg d Q oss t d(on) tr td(off) tf Ciss C oss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 49 Typ. 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units S nC 21 ns pF Conditions VDS = 15V, ID = 50A ID = 24.8A VDS = 15V VGS = 4.5V VGS = 0V, ID = 24.8A, VDS = 15V VDD = 15V ID = 24.8A RG = 0.6 VGS = 4.5V VGS = 0V VDS = 15V = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
213 62
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units 0.88 0.80 41 64 43 70 62 A 248 1.3 62 96 65 105 V ns nC ns nC
VSD t rr Qr r t rr Qr r
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 125°C, IS = 31A, VGS = 0V TJ = 25°C, I F = 31A, VR=20V di/dt = 100A/µs TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs
2
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IRF3708/3708S/3708L
1000
VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V
1000
VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
2.7V
2.7V
10
10
20µs PULSE WIDTH Tj = 25°C
1 0.1 1 10 100 1 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
I D = 62A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C TJ = 175 ° C
1.5
100
1.0
0.5
10 2.0
V DS = 15V 20µs PULSE WIDTH 5.0 3.0 4.0 6.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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