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Part: IRF3709STRR
Category:
Discrete
Description: 30V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRF3709STRR datasheet File size : 120 kB
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Datasheet text preview:
PD - 94071
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
IRF3709 IRF3709S IRF3709L
HEXFET® Power MOSFET
VD S S
30V
RDS(on) max
9.0m
ID
90A
TO-220AB IRF3709
D2Pak IRF3709S
TO-262 IRF3709L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 ± 20 90 57 360 120 3.1 0.96 -55 to + 150
Units
V V A W W mW/°C °C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
0.50
Max.
1.04 62 40
Units
°C/W
Notes through are on page 11
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1
02/20/01
IRF3709/3709S/3709L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 Static Drain-to-Source On-Resistance Gate Threshold Voltage 1.0 Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. 0.029 6.4 7.4 Max. Units V V/°C 9.0 m 10.5 3.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qg s Qg d Q oss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 53 27 6.7 9.7 22 11 171 21 9.2 2672 1064 109 Max. Units S 41 nC ns pF Conditions VDS = 15V, ID = 30A ID = 15A VDS = 16V VGS = 5.0V VGS = 0V, VDS = 10V VDD = 15V ID = 30A RG = 1.8 VGS = 4.5V VGS = 0V VDS = 16V = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
382 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units 0.88 0.82 48 46 48 52 90 A 360 1.3 72 69 72 78 V ns nC ns nC
VSD trr Qr r trr Qr r
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 125°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 30A, VR=15V di/dt = 100A/µs TJ = 125°C, IF = 30A, VR=15V di/dt = 100A/µs
2
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IRF3709/3709S/3709L
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V B O T T O M 2.7V TOP
1000
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V B O T T O M 2.7V TOP
2.7V
2.7V
10
10
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D = 90A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
100
1.0
0.5
10 2.0
V DS = 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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