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Part: IRF3710
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 100V Single N-channel HexFET Power MOSFET in a TO-220AB Package
Company: International Rectifier Corp.
Datasheet: Download IRF3710 datasheet File size : 120 kB
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Datasheet text preview:
PD - 91309A
IRF3710
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 23m
G S
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
57 40 230 200 1.3 ± 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.75 62
Units
°C/W
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1
01/17/02
IRF3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) gfs IDSS I GSS Qg Qg s Qg d t d(on) tr t d(off) tf LD LS Ciss C oss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 100 2.0 32
Typ. 0.13 12 58 45 47 4.5
Max. Units V V / ° C 23 m 4.0 V S 25 µA 250 100 nA -100 130 26 nC 43 ns nH
7.5
3130 410 72 1060280
pF mJ
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID =28A VDS = VGS, ID = 250µA VDS = 25V, ID = 28A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 28A VDS = 80V VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 28A RG = 2.5 VGS = 10V, See Fig. 10 Between lead, 6mm (0.25in.) G from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 IAS = 28A, L = 0.70mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qr r ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. M a x . U n i t s
Conditions D MOSFET symbol 57 showing the A G integral reverse 230 S p-n junction diode. 1 . 2 V TJ = 25°C, IS = 28A, VGS = 0V 140 220 ns TJ = 25°C, IF = 28A 670 1010 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 28A, di/dt 380A/µs, VDD V(BR)DSS,
TJ 175°C
Starting TJ = 25°C, L = 0.70mH
Pulse width 400µs; duty cycle 2%. RG = 25, IAS = 28A, VGS=10V (See Figure 12) This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
2
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IRF3710
1000
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP
10
10
3.5V
1
3.5V
1
20µs PULSE WIDTH Tj = 25°C
0.1 0.1 1 10 100 0.1 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 57A
ID, Drain-to-Source Current ( )
2.5
100.00
R DS(on) , Drain-to-Source On Resistance
T J = 175°C
10.00
2.0
(Normalized)
1.5
T J = 25°C
1.00
1.0
0.5
0.10 3.0 4.0 5.0
VDS = 15V 20µs PULSE WIDTH
6.0 7.0 8.0 9.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 1 0 V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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