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Part: IRF3710STRL
Category:
Discrete
Description: 100V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRF3710STRL datasheet File size : 120 kB
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Datasheet text preview:
PD - 94201A
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
IRF3710S IRF3710L
VDSS = 100V RDS(on) = 23m
G S
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak IRF3710S
TO-262 IRF3710L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
57 40 180 200 1.3 ± 20 28 20 5.8 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
Max.
0.75 40
Units
°C/W
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1
12/30/02
IRF3710S/IRF3710L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) gfs IDSS I GSS Qg Qg s Qg d t d(on) tr t d(off) tf LD LS Ciss C oss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 100 2.0 32
Typ. 0.13 12 58 45 47 4.5
Max. Units V V / ° C 23 m 4.0 V S 25 µA 250 100 nA -100 130 26 nC 43 ns nH
7.5
3130 410 72 1060 280
pF mJ
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID =28A VDS = VGS, ID = 250µA VDS = 25V, ID = 28A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 28A VDS = 80V VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 28A RG = 2.5 VGS = 10V, See Fig. 10 Between lead, 6mm (0.25in.) G from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 IAS = 28A, L = 0.70mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qr r ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. M a x . U n i t s
Conditions D MOSFET symbol 57 showing the A G integral reverse 230 S p-n junction diode. 1 . 2 V TJ = 25°C, IS = 28A, VGS = 0V 140 220 ns TJ = 25°C, IF = 28A 670 1010 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.70mH, RG = 25, IAS = 28A, VGS=10V. (See Figure 12). ISD 28A, di/dt 380A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C . Uses IRF3710 data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRF3710S/IRF3710L
1000
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V T OP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V T OP
10
10
3.5V
1
3.5V
1
20µs PULSE WIDTH Tj = 25°C
0.1 0.1 1 10 100 0.1 0.1 1
20µs PULSE WIDTH Tj = 175°C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 57A
ID, Drain-to-Source Current ( )
2.5
T J = 175°C
10.00
R DS(on) , Drain-to-Source On Resistance
100.00
2.0
(Normalized)
1.5
T J = 25°C
1.00
1.0
0.5
0.10 3.0 4.0 5.0
VDS = 15V 20µs PULSE WIDTH
6.0 7.0 8.0 9.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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