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Part: IRF3710Z
Category:
Discrete
Description: 100V Single N-channel HexFET Power MOSFET in a TO-220AB Package
Company: International Rectifier Corp.
Datasheet: Download IRF3710Z datasheet File size : 120 kB
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Datasheet text preview:
PD - 94632
AUTOMOTIVE MOSFET
Features
Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
Advanced
IRF3710Z
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 18m
G S
ID = 59A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C I DM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
Max.
59 42 240 160 1.1 ± 20 170 200 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A
c
W W/°C V mJ A mJ °C
c
i
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Thermal Resistance
RJC RCS RJA
Mounting torque, 6-32 or M3 screw
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.92 62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
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1
03/11/03
IRF3710Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
100 2.0 35 0.10 14 82 19 27 17 77 41 56 4.5 7.5 2900 290 150 1130 170 280 18 4.0 20 250 200 -200 120 28 40 pF
Conditions
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 35A V VDS = VGS, ID = 250µA S VDS = 50V, ID = 35A µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 35A VDS = 80V VGS = 10V ns VDD = 50V ID = 35A RG = 6.8 VGS = 10V D nH Between lead,
f
f f
6mm (0.25in.) from package
G
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton
Notes:
Min. Typ. Max. Units
50 100 59 A 240 1.3 75 160 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
p-n junction diode. TJ = 25°C, IS = 35A, VGS = 0V TJ = 25°C, IF = 35A, VDD = 25V di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.27mH, as Coss while VDS is rising from 0 to 80% VDSS . RG = 25, IAS = 35A, VGS =10V. Part not Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. recommended for use above this value. ISD 35A, di/dt 380A/µs, VDD V(BR)DSS, This value determined from sample failure population. 100% TJ 175°C. tested to this value in production. Repetitive rating; pulse width limited by
2
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IRF3710Z
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4 .5 V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4 .5 V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
4.5V
10
4.5V
0.1
20µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
20µs PULSE WIDTH Tj = 175°C
1 0.1 1 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
GFS , Forward Transconductance (S)
ID, Drain-to-Source Current ()
100
100
T J = 175°C
TJ = 25°C
80
T J = 175°C
60
10
1
T J = 25°C VDS = 25V 20µs PULSE WIDTH
2 4 6 8 10
40
20
0
VDS = 15V 20µs PULSE WIDTH
0 10 20 30 40 50 60 70
0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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3
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