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Part: IRF3710ZS
Category:
Description: 100V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRF3710ZS datasheet File size : 120 kB
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Datasheet text preview:
PD - 94632A
AUTOMOTIVE MOSFET
Features
Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
Advanced
HEXFET® Power MOSFET
D
IRF3710Z IRF3710ZS IRF3710ZL
VDSS = 100V RDS(on) = 18m
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G S
ID = 59A
TO-220AB IRF3710Z
D2Pak IRF3710ZS
TO-262 IRF3710ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C I DM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Pulsed Drain Current
Max.
59 42 240 160 1.1 ± 20 170 200 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/°C V mJ A mJ °C
c
i
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
h
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)j
Typ.
0.50
Max.
0.92 62 40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
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1
08/29/03
IRF3710Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
100 2.0 35 0.10 14 82 19 27 17 77 41 56 4.5 7.5 2900 290 150 1130 170 280 18 4.0 20 250 200 -200 120 28 40 pF
Conditions
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 35A V VDS = VGS, ID = 250µA S VDS = 50V, ID = 35A µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V nC ID = 35A VDS = 80V VGS = 10V ns VDD = 50V ID = 35A RG = 6.8 VGS = 10V D nH Between lead,
f
f f
6mm (0.25in.) from package
G
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
50 100 59 A 240 1.3 75 160 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
p-n junction diode. TJ = 25°C, IS = 35A, VGS = 0V TJ = 25°C, IF = 35A, VDD = 25V di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.27mH, RG = 25, IAS = 35A, VGS =10V. Part not recommended for use above this value. ISD 35A, di/dt 380A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRF3710Z/S/L
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4 .5 V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4 .5 V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
4.5V
10
4.5V
0.1
20µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
20µs PULSE WIDTH Tj = 175°C
1 0.1 1 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
GFS , Forward Transconductance (S)
ID, Drain-to-Source Current ()
100
100
T J = 175°C
TJ = 25°C
80
T J = 175°C
60
10
1
T J = 25°C VDS = 25V 20µs PULSE WIDTH
2 4 6 8 10
40
20
0
VDS = 15V 20µs PULSE WIDTH
0 10 20 30 40 50 60 70
0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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