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Part: IRF3711
Category:
Discrete
Description: 20V Single N-channel HexFET Power MOSFET in a TO-220AB Package
Company: International Rectifier Corp.
Datasheet: Download IRF3711 datasheet File size : 120 kB
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Datasheet text preview:
PD- 94062C
SMPS MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Symbol
V DS VGS ID @ TC = 25°C ID @ TC = 100°C I DM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
IRF3711 IRF3711S IRF3711L
HEXFET® Power MOSFET
VD S S
20V
RDS(on) max
6.0m
ID
110A
TO-220AB IRF3711
D2Pak IRF3711S
TO-262 IRF3711L
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 110 69 440 120 3.1 0.96 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
0.50
Max.
1.04 62 40
Units
°C/W
Notes through are on page 11
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1
5/26/03
IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 Static Drain-to-Source On-Resistance Gate Threshold Voltage 1.0 Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. 0.022 4.7 6.2 Max. Units V V/°C 6.0 m 8.5 3.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, I D = 12A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qg s Qg d Q oss t d(on) tr t d(off) tf Ciss C oss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 Typ. 29 7.3 8.9 33 12 220 17 12 2980 1770 280 Max. Units S 44 nC ns pF Conditions VDS = 16V, ID = 30A ID = 15A VDS = 10V VGS = 4.5V VGS = 0V, VDS = 10V VDD = 10V ID = 30A RG = 1.8 VGS = 4.5V VGS = 0V VDS = 10V = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
460 30
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units 110 440 1.3 75 92 72 98 V ns nC ns nC A
V SD t rr Qr r t rr Qr r
0.88 0.82 50 61 48 65
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 30A, V GS = 0V TJ = 125°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 16A, VR=10V di/dt = 100A/µs TJ = 125°C, IF = 16A, VR=10V di/dt = 100A/µs
2
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IRF3711/3711S/3711L
1000
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
100
2.7V
2.7V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
10 0.1
10 0.1
20µs PULSE WIDTH TJ = 150 ° C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 ° C TJ = 150 ° C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 110A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
10 2.0
V DS = 25V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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