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Part: IRF3711ZL
Category:
Description: 20V Single N-channel HexFET Power MOSFET in a TO-262 Package
Company: International Rectifier Corp.
Datasheet: Download IRF3711ZL datasheet File size : 120 kB
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Datasheet text preview:
PD - 94757A
IRF3711Z IRF3711ZS IRF3711ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET
VDSS RDS(on) max
20V 6.0m:
Qg
16nC
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3711Z
D2Pak IRF3711ZS
TO-262 IRF3711ZL
Absolute Maximum Ratings
Parameter
VDS V GS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TS T G Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 92 65
Units
V A
h h
380 79 40 0.53 -55 to + 175 W/°C °C W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
f
300 (1.6mm from case) 10 lbfyin (1.1Nym)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case
i
Typ.
Max.
1.89 62 40
Units
°C/W
Case-to-Sink, Flat Greased Surface Junction-to-Ambient
fiÃ
f
0.50
Junction-to-Ambient (PCB Mount)
gi
Notes through are on page 12
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1
10/30/03
IRF3711Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 1.55 46 0.013 4.8 5.9 2.0 -5.6 16 4.6 1.4 5.3 4.7 6.7 9.5 12 16 15 5.4 2150 680 320 6.0 7.3 2.45 1.0 150 100 -100 24 pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV / °C µA V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
e e
VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A
See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 12A Clamped Inductive Load
e
= 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche Currentà Repetitive Avalanche Energy Typ. Max. 130 12 7.9 Units mJ A mJ
16 6.0
Diode Characteristics
Parameter
IS ISM VSD t rr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
92
h
Conditions
MOSFET symbol
D
A 380 1.0 24 9.0 V ns nC
showing the integral reverse
G S
p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs
e
e
2
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IRF3711Z/S/L
1000 1000
VGS T OP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V T OP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
3.0V
10
3.0V
10
60µs PULSE WIDTH Tj = 25°C
1 0.1 1 10
60µs PULSE WIDTH Tj = 175°C
1 0.1 1 10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current ()
T J = 25°C T J = 175°C
ID = 30A VGS = 10V
100
1.5
10
(Normalized)
1.0
VDS = 10V 60µs PULSE WIDTH
1 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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