IRF3711ZL datasheet - 20V Single N-channel HexFET Power MOSFET in a TO-262


Part number	IRF3711ZL
Category
Description	20V Single N-channel HexFET Power MOSFET in a TO-262 Package
Company	International Rectifier Corp.
Datasheet	Download IRF3711ZL datasheet
Request For Quote	Find where to buy IRF3711ZL

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PD - 94757A

IRF3711Z IRF3711ZS IRF3711ZL

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET® Power MOSFET

VDSS RDS(on) max

20V 6.0m:

Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current

TO-220AB IRF3711Z

D2Pak IRF3711ZS

TO-262 IRF3711ZL

Absolute Maximum Ratings

Parameter

VDS V GS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TS T G Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

380 79 40 0.53 -55 to + 175 W/°C °C W

Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case) 10 lbfyin (1.1Nym)

Thermal Resistance

Parameter

RJC RCS RJA RJA Junction-to-Case

1.89 62 40

Case-to-Sink, Flat Greased Surface Junction-to-Ambient

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