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Part: IRF3717
Category:
Description: 20V Single N-channel HexFET Power MOSFET in a SO-8 Package
Company: International Rectifier Corp.
Datasheet: Download IRF3717 datasheet File size : 120 kB
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Datasheet text preview:
PD - 95843
IRF3717
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
VDSS
20V
4.4m:@VGS = 10V
A A D D D D
RDS(on) max
ID
20A
S S
1 2 3 4
8 7
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
S G
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 20 16 160 2.5 1.6 0.02 -55 to + 150
Units
V
c
A W W/°C °C
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
20 50
Units
°C/W
f
Notes through are on page 10
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2/20/04
1
IRF3717
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
20 1.55 57 0.014 3.7 4.8 2.0 -5.4 22 6.8 2.2 7.3 5.7 9.5 12 12 14 15 6.0 2890 930 430 4.4 5.7 2.45 1.0 150 100 -100 33 Typ. pF nC nC V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 20A V VGS = 4.5V, ID = 16A VDS = VGS, ID = 250µA
e e
mV/°C µA VDS = 16V, VGS = 0V nA S VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 16A VDS = 10V VGS = 4.5V ID = 16A See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 16A Clamped Inductive Load VGS = 0V VDS = 10V = 1.0MHz Max. 32 16 Units mJ A
ns
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
22 13 20 A 160 1.0 32 19 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25°C, IS = 16A, VGS = 0V TJ = 25°C, IF = 16A, VDD = 10V di/dt = 100A/µs
e
e
2
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IRF3717
1000
TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.5V 20µs PULSE WIDTH Tj = 150°C 0.1 1 10 100
1
20µs PULSE WIDTH Tj = 25°C 2.5V
0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.5
100
10
T J = 150°C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 20A VGS = 10V
1.0
1
T J = 25°C VDS = 10V 20µs PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
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