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Details, datasheet, quote on part number:IRF640STR
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Datasheet text preview:
PD -90902B
IRF640S/L
HEXFET® Power MOSFET
l l l l l l l
Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 200V RDS(on) = 0.18
G S
ID = 18A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and costeffectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
18 11 72 3.1 130 1.0 ± 20 580 18 13 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
1.0 40
Units
°C/W
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1
7/20/99
IRF640S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 2.0 6.7 Typ. 0.29 14 51 45 36 7.5 Max. Units V V/°C 0.18 4.0 V S 25 µA 250 100 nA -100 70 13 nC 39 ns nH Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A VDS = V GS, ID = 250µA VDS = 50V, ID = 11A VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 18A VDS =160V VGS = 10V, See Fig. 6 and 13 VDD =100V ID = 18A RG = 9.1 RD = 5.4, See Fig. 10 Between lead, and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
1300 430 130
pF
Source-Drain Ratings and Characteristics
IS
ISM
VS D tr r Qr r ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 18 showing the A G integral reverse 72 S p-n junction diode. 2 . 0 V TJ = 25°C, IS = 18A, VGS = 0V 300 610 ns TJ = 25°C, IF = 18A 3 . 4 7 . 1 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%.
Uses IRF640 data and test conditions
VDD = 50V, starting TJ = 25°C, L = 2.7mH
RG = 25, IAS = 18A. (See Figure 12)
TJ 150°C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 18A, di/dt 150A/µs, VDD V(BR)DSS,
2
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IRF640S/L
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 175oC
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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