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Details, datasheet, quote on part number:IRF6601
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Datasheet text preview:
HEXFET® Power MOSFET
l l l l l l l
IRF6601
Qg
30nC
PD - 94366D
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with exisiting Surface Mount Techniques
VDSS
20V
RDS(on) max
3.8m@VGS = 10V 5.0m@VGS = 4.5V
Description
DirectFET ISOMETRIC
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ±20 85 26 20 200 3.6 2.3 42 0.029 -40 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation Power Dissipation
c
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case
RJA RJA RJA RJC RJ-PCB
i
f g h
Typ.
12.5 20 1.0
Max.
35 3.0
Units
°C/W
Junction-to-PCB Mounted
Notes through are on page 11
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1
06/11/03
IRF6601
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
20 1.0 50 19 3.2 4.4 -4.6 30 5.4 2.9 12 9.2 15 48 61 21 28 22 3440 2430 380 3.8 5.0 3.0 20 100 100 -100 45 pF VGS = 0V VDS = 15V ns nC nC VDS = 10V VGS = 4.5V ID = 16A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 26A VGS = 4.5V, ID = 21A
e e
VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70°C VGS = 20V VGS = -20V VDS = 10V, ID = 21A
See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5VÃe ID = 21A Clamped Inductive Load
= 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche Currentà Repetitive Avalanche Energy Typ. Max. 65 21 0.36 Units mJ A mJ
0.83 60 94
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ã Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
26 A 200 1.2 90 140 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25°C, IS = 21A, VGS = 0V TJ = 25°C, IF = 21A di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF6601
1000
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
100
2.7V
2.7V
20µs PULSE WIDTH Tj = 25°C
10 0.1 1 10 100
20µs PULSE WIDTH Tj = 150°C
10 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D = 26A
ID, Drain-to-Source Current ()
T J = 25°C T J = 150°C
RDS(on) , Drain-to-Source On Resistance
1.5
100
(Normalized)
1.0
0.5
10 2.5 3.0
VDS = 15V 20µs PULSE WIDTH
3.5 4.0
0.0 - 60 - 40 - 20 0 20 40 60 80
V GS = 10V
100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature
( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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