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Details, datasheet, quote on part number:IRF7350TR
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Datasheet text preview:
PD - 94226B
IRF7350
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel
S1 G1 S2 G2
N -C H A N N EL M O S FE T 1 8 2 7
D1 D1
N-Ch VDSS 100V
P-Ch -100V
3
6
D2 D2
4
5
P -C H A N N E L M O S F E T
RDS(on) 0.21
0.48
T o p V ie w
Description
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C EAS VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
N-Channel 100 2.1 1.7 8.4 2.0 0.016 35 ± 20 4.0 -55 to + 150 51 ± 20 4.3 P-Channel -100 -1.5 -1.2 -6.0
Units
A
W W/°C mJ V V/ns °C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
Max.
20 62.5
Units
°C/W
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1
08/09/01
IRF7350
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 100 -- -- VGS = 0V, I D = 250µA V -100 -- -- VGS = 0V, ID = -250µA -- 0.12 -- Reference to 25°C, I D = 1mA V/°C -- -0.11 -- Reference to 25°C, ID = -1mA -- -- -- -- -- -- -- -- -- -- -- 19 21 3.0 3.4 8.8 10 6.7 25 11 13 35 30 20 40 380 360 100 110 54 65 0.21 0.48 VGS = 10V, ID = 2.1A VGS = -10V, ID = -1.5A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
N-Ch -- R DS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch -- 2.0 -2.0 2.4 1.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf C iss C oss C rss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
4.0 V -4.0 -- S -- 25 -25 µA 250 -250 ±100 28 31 4.5 nC 5.1 13 16 -- -- -- -- ns -- -- -- -- -- -- -- pF -- -- --
VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 50V, ID = 2.1A VDS = -50V, ID = -1.5A VDS = 100V, VGS = 0V VDS = -100V, VGS = 0V VDS = 80 V, VGS = 0V, TJ = 70°C VDS = -80V, VGS = 0V, TJ = 70°C VGS = ± 20V N-Channel ID = 2.1A, VDS = 80V, VGS = 10V P-Channel ID = -1.5A, VDS = -80V, VGS = -10V N-Channel VDD = 50V, I D = 1.0A, RG = 22, RD = 50, VGS = 10V P-Channel VDD = -50V, ID = -1.0A, RG = 22, RD = 50, VGS = -10V N-Channel VGS = 0V, V DS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter IS ISM V SD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- 72 -- 77 -- 205 -- 240 Max. Units Conditions 1.8 -1.4 A 8.4 -6.0 1.3 TJ = 25°C, IS = 1.8A, VGS = 0V V -1.6 TJ = 25°C, IS = -1.4A, VGS = 0V 110 ns N-Channel 120 TJ = 25°C, IF = 1.8A, di/dt = 100A/µs 310 nC P-Channel TJ = 25°C, IF = -1.4A, di/dt = -100A/µs 360
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
N channel: Starting TJ = 25°C, L = 4.0mH, RG = 25, IAS = 4.2A
P channel: Starting TJ = 25°C, L = 11mH, RG = 25, IAS = -3.0A
Pulse width 400µs; duty cycle 2%. Surface mounted on 1 in square Cu board
2
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N-CHANNEL
IRF7350
100
VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP
100
ID , Drain-to-Source Current (A)
10
ID , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP
10
1
1
4.0V
0.1
0.1
4.0V 20µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
20µs PULSE WIDTH Tj = 150°C
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10.00
2.5
I D = 2.1A
ID , Drain-to-Source Current ( )
T J = 150°C
R DS(on) , Drain-to-Source On Resistance
2.0
1.00
(Normalized)
1.5
T J = 25°C
0.10
1.0
0.5
0.01 3.0 4.5
VDS = 15V 20µs PULSE WIDTH
6.0 7.5 9.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 1 0 V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
(° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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