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Details, datasheet, quote on part number:IRF7755
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| Part: | IRF7755 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | -20V Dual P-channel HexFET Power MOSFET in a TSSOP-8 Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download IRF7755 datasheet File size : 256 kB |
| Request For quote: | Find where to buy IRF7755
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Datasheet text preview:
PD -93995A
IRF7755
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-20V
RDS(on) max
51m@VGS = -4.5V 86m@VGS = -2.5V
ID
-3.7A -2.8A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -3.9 -3.1 -15 1 0.64 0.01 ±20 -55 to +150
Units
V A W W W/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
125
Units
°C/W
www.irf.com
1
4/9/01
IRF7755
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -20 -0.45 7.0
Typ. 0.011 35.3 44.3 11 2.1 3.5 9 13 89 61 1090 182 124
Max. Units V V / ° C 51 m 86 -1.2 V S -15 µA -25 -100 nA 100 17 nC 14 20 ns 133 92 pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -3.7A VGS = -2.5V, ID = -2.8A VDS = VGS, ID = -250µA VDS = -10V, ID = -3.7A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = -3.7A VDS = -16V VGS = -4.5V VDD = -10V, VGS = -4.5V ID = -1.0A RG = 6.0 RD = 10 VGS = 0V VDS = -15V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units 55 29 -1.0 A -15 -1.2 82 43 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, I F = -1.0A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10sec.
Pulse width 300µs; duty cycle 2%.
2
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IRF7755
100
VGS -7.5V -4.5V -3.5V -3.0V -2.5V -2.0V -1.75V BOTTOM -1.5V TOP
100
VGS -7.5V -4.5V -3.5V -3.0V -2.5V -2.0V -1.75V BOTTOM -1.5V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
1
-1.5V
-1.5V 20µs PULSE WIDTH Tj = 25°C
0.1 0.1 1 10 100
20µs PULSE WIDTH Tj = 150°C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.9A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 ° C TJ = 25 ° C
1
1.0
0.5
0.1 1.0
V DS = -15V 20µs PULSE WIDTH 1.5 2.0 2.5 3.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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