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Details, datasheet, quote on part number:IRFBF20STRR
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Datasheet text preview:
PD - 9.1665
PRELIMINARY
l l l l l l l
IRFBF20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBF20S) Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 900V RDS(on) = 8.0
G
ID = 1.7A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBF20L) is available for low-profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VG S EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
1.7 1.1 6.8 3.1 54 0.43 ± 20 180 1.7 5.4 1.5 -55 to + 150 300 (1.6mm from case )
Units
A W W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
2.3 40
Units
°C/W
7/10/97
IRFBF20S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr t d(off) tf LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 900 2.0 0.60
Typ. 1.1 8.0 21 56 32 7.5 490 55 18
Max. Units V V/°C 8.0 4.0 V S 100 µA 500 100 nA -100 38 4.7 nC 21 ns nH
pF
Conditions V GS = 0V, ID = 250µA Reference to 25°C, ID =1mA VGS =10V, ID = 1.0A VDS = VGS, ID = 250µA VDS = 50V, I D = 1.0A VDS = 900V, VGS = 0V VDS = 720V, VGS = 0V, TJ = 125°C V GS = 20V VGS = -20V I D = 1.7A VDS = 360V VGS = 10V, See Fig. 6 and 13 VDD = 450V I D = 1.7A R G = 18 RD = 280, See Fig. 10 Between lead, and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD tr r Q rr t on Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 1.7 showing the A G integral reverse 6 . 8 p-n junction diode. S 1.5 V TJ = 25°C, IS = 1.7A, VGS = 0V 350 530 ns TJ = 25°C, IF = 1.7A 0 . 8 5 1 . 3 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD =50V, starting TJ = 25°C, L =117mH RG = 25, I AS = 1.7A. (See Figure 11)
Pulse width 300µs; duty cycle 2%. Uses IRFBF20 data and test conditions
ISD 1.7A, di/dt 70A/µs, VDD V(BR)DSS ,
TJ 150°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
IRFBF20S/L
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