|
Details, datasheet, quote on part number:IRFI540NPBF
| |
Datasheet text preview:
PD - 94833
HEXFET® Power MOSFET
l l l l l l
IRFI540NPbF
D
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
VDSS = 100V
G S
RDS(on) = 0.052 ID = 20A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLP K A
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
20 14 110 54 0.36 ±20 300 16 5.4 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/°C V mJ A mJ V/ns °C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.
Typ.
Max.
2.8 65
Units
°C/W 11/13/03
IRFI540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 100 2.0 11
Typ. 0.11 8.2 39 44 33 4.5 7.5 1400 330 170 12
Max. U n i t s V V/°C 0.052 4.0 V S 25 µA 250 100 nA -100 94 15 nC 43 ns nH
pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A VDS = VGS, ID = 250µA VDS = 50V, ID = 16A VDS = 100V, V GS = 0V VDS = 80V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 16A VDS = 80V VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 16A RG = 5.1 RD = 3.0, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 = 1.0MHz
D
G S
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 170 1.1 20 110 1.3 250 1.6 V ns µC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V TJ = 25°C, IF = 16A di/dt = 100A/µs
D
G S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. t=60s, =60Hz
Uses IRF540N data and test conditions
VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25, IAS = 16A. (See Figure 12)
ISD 16A, di/dt 210A/µs, VDD V(BR)DSS,
TJ 175°C
IRFI540NPbF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
100
10
4.5V
10
4.5V
1 0.1 1
20µs PULSE WIDTH TC = 25°C
10
A
100
1 0.1 1
20µs PULSE WIDTH TC = 175°C
10 100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 27A
I D , Drain-to-Source Current (A)
2.5
100
2.0
TJ = 25°C TJ = 175°C
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 50V 20µs PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
|
|
