|
Details, datasheet, quote on part number:IRFL024NTR
| |
Datasheet text preview:
PD - 91861A
IRFL024N
HEXFET® Power MOSFET
l l l l l l
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.075
G S
ID = 2.8A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
4.0 2.8 2.3 11.2 2.1 1.0 8.3 ± 20 214 2.8 0.1 5.0 -55 to + 150
Units
A
W W
mW/°C
V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90 50
Max.
120 60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
6/15/99
IRFL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 55 2.0 3.0
Typ. 0.056 8.1 13.4 22.2 17.7 400 145 60
Max. Units V V/°C 0.075 4.0 V S 25 µA 250 100 nA -100 18.3 3.0 nC 7.7 ns pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.8A VDS = VGS, ID = 250µA VDS = 25V, ID = 1.68A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 1.68A VDS = 44V VGS = 10V, See Fig. 6 and 9 VDD = 28V ID = 1.68A RG = 24 RD = 17, See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. M a x . U n i t s
Conditions MOSFET symbol 2 . 8 showing the A integral reverse 11.2 p-n junction diode. 1 . 0 V TJ = 25°C, IS =1.68A, VGS = 0V 35 53 ns TJ = 25°C, IF = 1.68A 50 75 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 1.68A, di/dt 155A/µs, VDD V(BR)DSS,
TJ 150°C
Starting TJ = 25°C, L = 54.7 mH
RG = 25, IAS = 2.8A. (See Figure 12)
Pulse width 300µs; duty cycle 2%.
2
www.irf.com
IRFL024N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
10
10
4.5V
1
4.5V
1
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
2.0
I D = 2.8A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
1.5
10
1.0
TJ = 150 ° C
0.5
TJ = 25 ° C
1 4.5 V DS = 25V 20µs PULSE WIDTH 5.0 5.5 6.0 6.5
0.0 -60 -40 -20
V G S = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
|
|
