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Details, datasheet, quote on part number:IRFM064
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| Part: | IRFM064 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 60V Single N-channel Hi-rel MOSFET in a TO-254AA Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download IRFM064 datasheet File size : 192 kB |
| Request For quote: | Find where to buy IRFM064
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Datasheet text preview:
PD - 90875A
P OW E R MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM064
IRFM064 6 0 V , N-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
RDS(on)
0.017
ID
35A*
HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually a n y application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IA R EAR dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight *Current is limited by pin diameter For footnotes refer to the last page 35* 35* 380 250 2.0 ±20 620 -- -- 4.5 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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IRFM064
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage B V D S S/ T J Temperature Coefficient of Breakdown Voltage RD S ( o n ) Static Drain-to-Source On-State Resistance VG S ( t h ) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 2.0 21 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.048 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.017 4.0 -- 25 250 100 -100 240 53 78 27 120 76 93 -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 35A VDS = VGS, ID = 250µA VDS > 15V, IDS = 35A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 35A VDS = 30V VDD = 30V, ID = 35A, VGS =10V, RG = 2.35
IG S S IG S S Qg Qgs Qg d td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ci s s Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7400 3200 540
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM V SD trr QRR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35* 380 3.0 220 1.1
Test Conditions
A
V nS µC Tj = 25°C, IS = 35A, VGS = 0V Tj = 25°C, IF = 35A, di/dt 100A/µs VDD 50V
to n Forward Turn-On Time *Current is limited by pin diameter
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.21 -- 0.5 -- 48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFM064
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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