|
Details, datasheet, quote on part number:IRFP254N
| |
Datasheet text preview:
PD - 94213
IRFP254N
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
D
VDSS = 250V RDS(on) = 125m
G S
ID = 23A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
23 16 92 220 1.5 ± 20 300 14 22 7.4 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.24
Max.
0.68 40
Units
°C/W
www.irf.com
1
7/20/01
IRFP254N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) gfs IDSS I GSS Qg Qg s Qg d t d(on) tr t d(off) tf LD LS Ciss C oss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 250 2.0 15
Typ. 0.33 14 34 37 29 5.0 13
Max. Units V V / ° C 125 m 4.0 V S 25 µA 250 100 nA -100 100 17 nC 44 ns nH
2040 260 62
pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 14A VDS = VGS, ID = 250µA VDS = 25V, ID = 14A VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 14A VDS = 200V VGS = 10V, See Fig. 6 and 13 VDD = 125V ID = 14A RG = 3.6 VGS = 10V, See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qr r ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 23 showing the A G integral reverse 92 S p-n junction diode. 1 . 3 V TJ = 25°C, IS = 14A, VGS = 0V 210 310 ns TJ = 25°C, IF = 14A 1 . 7 2 . 6 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD 14A, di/dt 460A/µs, VDD V(BR)DSS,
TJ 175°C
Starting TJ = 25°C, L = 3.1mH
RG = 25, IAS = 14A,VGS=10V
Pulse width 400µs; duty cycle 2%.
2
www.irf.com
IRFP254N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
10
1
4.5V
4.5V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
4.0
I D = 23A
TJ = 175 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
3.0
10
2.0
TJ = 25 ° C
1.0
1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
|
|
