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Part: IRFR9N20DTRR
Category:
Discrete
Description: 200V Single N-channel HexFET Power MOSFET in a D-pak Package
Company: International Rectifier Corp.
Datasheet: Download IRFR9N20DTRR datasheet File size : 173 kB
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Datasheet text preview:
PD - 93919A
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR9N20D IRFU9N20D
HEXFET® Power MOSFET
l
VD S S
200V
RDS(on) max
0.38
ID
9.4A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D-Pak IRFR9N20D
I-Pak IRFU9N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C I DM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
9.4 6.7 38 86 0.57 ± 30 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
Notes through are on page 10
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1
6/29/00
IRFR9N20D/IRFU9N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS I GSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 200 V 0.23 V/°C 0.38 3.0 5 . 5 V 25 µA 250 100 nA -100 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, T J = 150°C VGS = 30V VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 4.3 Typ. 18 4.7 9.0 7.5 16 13 9.3 560 97 29 670 40 74 Max. Units S 27 7.1 nC 14 ns pF Conditions VDS = 50V, ID = 5.6A ID = 5.6A VDS = 160V VGS = 10V, VDD = 100V ID = 5.6A RG = 11 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, V DS = 1.0V, = 1.0MHz VGS = 0V, VDS = 160V, = 1.0MHz VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
100 5.6 8.6
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
Min. Typ. Max. Units
Max.
1.75 50 110
Units
°C/W
Diode Characteristics
IS
ISM
VSD t rr Qr r ton
Conditions D MOSFET symbol 9 . 4 showing the A G integral reverse 38 S p-n junction diode. 1 . 3 V TJ = 25°C, IS = 5.6A, VGS = 0V 130 ns TJ = 25°C, I F = 5.6A 560 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR9N20D/IRFU9N20D
100
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V B O T T O M 5.5V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V B O T T O M 5.5V TOP
10
10
5.5V
1
1
5.5V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
0.1 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 9.4A
I D , Drain-to-Source Current (A)
2.5
10
TJ = 175 ° C
2.0
1.5
TJ = 25 ° C
1
1.0
0.5
0.1 4 6 8
V DS = 50V 20µs PULSE WIDTH 10 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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