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Part: IRFRU024N
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Power MOSFET ( Vdss=55v, RDS ( on ) =0.075ohm, Id=17a )
Company: International Rectifier Corp.
Datasheet: Download IRFRU024N datasheet File size : 173 kB
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Datasheet text preview:
PD- 9.1336A
PRELIMINARY
IRFR/U024N
HEXFET® Power MOSFET
D
l l l l l l
Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = 55V
G S
RDS(on) = 0.075 ID = 17A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -P a k T O -2 5 2 A A I-P a k T O -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS E AS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
17 12 68 45 0.30 ± 20 71 10 4.5 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
Max.
3.3 50 110
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
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1
IRFR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) g fs IDSS I GSS Qg Qg s Qg d t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 55 2.0 4.5
Typ. 0.052 4.9 34 19 27 4.5 7.5 370 140 65
Max. Units V V/°C 0.075 4.0 V S 25 µA 250 100 nA -100 20 5.3 nC 7.6 ns nH
pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS = 25V, ID = 10A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 10A VDS = 44V VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 10A RG = 24 RD = 2.6, See Fig. 10 Between lead, 6mm (0.25in.) G from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 17 showing the A G integral reverse 68 S p-n junction diode. 1.3 V TJ = 25°C, IS = 10A, VGS = 0V 56 83 ns TJ = 25°C, IF = 10A 120 180 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 1.0mH RG = 25, IAS = 10A. (See Figure 12) ISD 10A, di/dt 280A/µs, VDD V(BR)DSS, TJ 175°C
Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRFZ24N data and test conditions.
2
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IRFR/U024N
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I , D r a i n - t o - S o u r c e C u r r e n t (A ) D
I , D r a i n - t o - S o u r c e C u r r e n t (A ) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4 .5 V
4.5V 20µ s P U L S E W I D T H TC = 25°C
0.1 1 10 100
1
A
1 0.1 1
20µ s P U L S E W I D T H T C = 175°C
10 100
A
V D S , D r a i n - t o - S o u r c e V o l t a g e (V )
V D S , D r a i n - t o - S o u r c e V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R D S (o n ) , D r a in - to -S o u r c e O n R e s i s ta n c e (N o rm a li z e d )
I D = 17A
I D , D r a i n - t o - S o u r c e C u r r e n t (A )
2.5
TJ = 2 5 ° C TJ = 1 7 5 °C
2.0
10
1.5
1.0
0.5
1 4 5 6 7
V DS = 2 5V 2 0 µ s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10V
100 120 140 160 180
A
V G S , G a t e - t o - S o u r c e V o l t a g e (V )
T J , Junction T e m p e r a t u r e (°C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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