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Part: IRFRU5305
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Power MOSFET ( Vdss=-55v, RDS ( on ) =0.065ohm, Id=-31a )
Company: International Rectifier Corp.
Datasheet: Download IRFRU5305 datasheet File size : 173 kB
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Datasheet text preview:
PD - 91402A
IRFR/U5305
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = -55V RDS(on) = 0.065
G
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak IRFR5305
I-Pak IRFU5305
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
-31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient**
Typ.
Max.
1.4 50 110
Units
°C/W
10/23/00
IRFR/U5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units -55 V -0.034 V/°C 0.065 -2.0 -4.0 V 8.0 S -25 µA -250 100 nA -100 63 13 nC 29 14 66 ns 39 63 4.5 7.5 1200 520 250 nH Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -16A VDS = VGS, ID = -250µA VDS = -25V, ID = -16A VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = -16A VDS = -44V VGS = -10V, See Fig. 6 and 13 VDD = -28V ID = -16A RG = 6.8 RD = 1.6, See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
pF
Source-Drain Ratings and Characteristics
IS
ISM
V SD trr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 71 170 -31 A -110 -1.3 110 250 V ns nC
Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = -16A, VGS = 0V TJ = 25°C, IF = -16A di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width 300µs; duty cycle 2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions.
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25, IAS = -16A. (See Figure 12)
ISD -16A, di/dt -280A/µs, VDD V(BR)DSS,
TJ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ** Uses typical socket mount.
2
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IRFR/U5305
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT T O M - 4.5V TO P
1000
- ID , D r a i n - t o - S o u r c e C u r r e n t (A )
- ID , D r a i n - t o - S o u rc e C u r r e n t (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
100
10
10
-4.5 V 2 0 µ s P U L S E W ID T H Tc = 2 5°C J A
0.1 1 10 100
- 4 .5 V 20 µ s P U L S E W ID T H TC = 17 5 ° C J
0.1 1 10
1
1
A
100
- VD S , D r a i n - t o - S o u r c e V o l t a g e (V )
- VD S , D r a i n - t o - S o u r c e V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 2 5 ° C TJ = 17 5 ° C
R D S ( o n ) , Drain-to-S o u r c e O n Resistance (N o rm a l i z e d )
I D = -27 A
- I D , D r a i n - t o - S o u r c e C u r r e n t (A )
1.5
10
1.0
0.5
1 4 5 6 7
V DS = -2 5 V 2 0 µ s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = -10 V
100 120 140 160 180
A
- V G S , G a te - t o - S o u r c e Volta g e (V )
T J , Junction T e m p e r a t u r e (°C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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