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Part: IRFRU5410
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Power MOSFET ( Vdss=-100v, RDS ( on ) =0.205ohm, Id=-13a )
Company: International Rectifier Corp.
Datasheet: Download IRFRU5410 datasheet File size : 173 kB
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Datasheet text preview:
PD - 9.1533A
l l l l l l l
Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
IRFR/U5410
VDSS = -100V RDS(on) = 0.205W
G S
ID = -13A
Description
Fifth Generation HEXFETs from International Rectifier u t i l i z e advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak T O-252AA I-Pak TO -251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-13 -8.2 -52 66 0.53 ± 20 194 -8.4 6.3 -5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RqJC RqJA RqJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
Max.
1.9 50 110
Units
°C/W
www.irf.com
1
5/3/99
IRFR/U5410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs For war d Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 -2.0 3.2 Typ. -0.12 15 58 45 46 4.5 7.5 760 260 170 Max. Units V V/°C 0.205 W -4.0 V S -25 µA -250 100 nA -100 58 8.3 nC 32 ns nH pF Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -10V, I D = -7.8A VDS = VGS, ID = -250µA VDS = -50V, ID = -7.8A VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = -8.4A VDS = -80V VGS = -10V, See Fig. 6 and 13 VDD = 50V ID = -8.4A RG = 9.1W RD =6.2W, See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD tr r Qr r ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol - 1 3 showing the A G integral reverse - 5 2 p-n junction diode. S -1.6 V TJ = 25°C, IS = -7.8A, VGS = 0V 130 190 ns TJ = 25°C, IF = -8.4A 650 970 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 6.4mH RG = 25W, IAS = -7.8A. (See Figure 12) ISD £ -7.8A, di/dt £ 200A/µs, VDD £ V(BR)DSS, TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Uses IRF9530N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRFR/U5410
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
1
-4.5V
0.1
1
-4.5V
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -14A
2.0
10
TJ = 150 ° C
1.5
1.0
1
0.5
0.1 4 5 6 7
V DS = 10V 20µs PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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