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Part: IRFRU6215
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Power MOSFET ( Vdss=-150v, RDS ( on ) =0.295ohm, Id=-13a )
Company: International Rectifier Corp.
Datasheet: Download IRFRU6215 datasheet File size : 173 kB
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Datasheet text preview:
PD - 91749
PRELIMINARY P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description
l
IRFR/U6215
HEXFET® Power MOSFET
D
VDSS = -150V RDS(on) = 0.295
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and r u g g e d i z e d device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -P A K T O -2 5 2 A A I-P A K T O -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient
Typ.
Max.
1.4 50 110
Units
°C/W
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1
5/11/98
IRFR/U6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. -150 -2.0 3.6
Typ. -0.20 14 36 53 37 4.5 7.5 860 220 130
Max. Units V V / ° C 0.295 0.58 -4.0 V S -25 µA -250 100 nA -100 66 8.1 nC 35 ns nH
pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -6.6A VGS = -10V, ID = -6.6A TJ = 150°C VDS = VGS, ID = -250µA VDS = -50V, ID = -6.6A VDS = -150V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150°C VGS = 20V V GS = -20V ID = -6.6A VDS = -120V VGS = -10V, See Fig. 6 and 13 VDD = -75V ID = -6.6A RG = 6.8 RD = 12, See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Qr r ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -13 showing the A G integral reverse -44 p-n junction diode. S -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V 160 240 ns TJ = 25°C, IF = -6.6A 1 . 2 1 . 7 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 14mH RG = 25, IAS = -6.6A. (See Figure 12) TJ 175°C
Pulse width 300µs; duty cycle 2% This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS, Uses IRF6215 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRFR/U6215
100
TOP
- ID , D r a i n - t o - S o u r c e C u r r e n t (A )
10
- ID , Drain-to-Source Current (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4 . 5 V 2 0 µ s P U L S E W ID T H T C = 1 7 5 °C
1 10
-4 .5 V
1 1 10
20 µ s P U L S E W ID T H T c = 25 ° C A
100
1
100
A
- VD S , D r a i n - t o - S o u r c e V o l t a g e (V )
- VD S , D r a i n - t o - S o u r c e V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R D S ( o n ) , Drain-to-S o u r c e O n Resistance (N o rm a l i z e d )
I D = -11 A
- I D , D r a i n - to - S o u r c e C u r r e n t (A )
2.0
TJ = 2 5 ° C TJ = 1 7 5 ° C
10
1.5
1.0
0.5
1 4 5 6 7
V D S = -5 0 V 2 0 µ s P U L S E W ID T H
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -1 0 V
100 120 140 160 180
A
- VG S , G a t e - t o - S o u r c e V o l t a g e (V )
T J , Junction T e m p e r a t u r e (°C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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