Details and datasheet on part: IRFRU9214


Part:	IRFRU9214
Category:	Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
Description:	Power MOSFET ( Vdss=-250v, RDS ( on ) =3.0ohm, Id=-2.7a )
Company:	International Rectifier Corp.
Datasheet:	Download IRFRU9214 datasheet File size : 110 kB
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Datasheet text preview:
PD - 9.1658A
PRELIMINARY
IRFR/U9214
HEXFET® Power MOSFET
D
l l l l l l
P-Channel Surface Mount (IRFR9214) Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -250V RDS(on) = 3.0
G S
ID = -2.7A
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -Pa k T O - 2 52 A A I-P a k TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VG S EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-2.7 -1.7 -11 50 0.40 ± 20 100 -2.7 5.0 -5.0 -55 to + 150 260 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.

Max.
2.5 50 110
Units
°C/W
9/23/97
IRFR/U9214
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -250 -2.0 0.9 Typ. -0.25 11 14 20 17 4.5 7.5 220 75 11 M a x . Units V V/°C 3.0 -4.0 V S -100 µA -500 100 nA -100 14 3.1 nC 6.8 ns nH Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -1.7A VDS = VGS, I D = -250µA VDS = -50V, I D = -1.7A VDS = -250V, VGS = 0V VDS = -200V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = -1.7A VDS = -200V VGS = -10V, See Fig. 6 and 13 VDD = -125V ID = -1.7A RG =21 RD =70 See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
pF
Source-Drain Ratings and Characteristics
IS
ISM
V SD tr r Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol - 2 . 7 showing the A G integral reverse - 1 1 p-n junction diode. S - 5 . 8 V TJ = 25°C, IS = -2.7A, V GS = 0V 150 220 ns TJ = 25°C, IF = -1.7A 870 1300 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 27 mH RG = 25, IAS = -2.7A. (See Figure 12) ISD -2.7A, di/dt 600A/µs, VDD V (BR)DSS, TJ 150°C
Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9214
10
TOP VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
10
TOP
-I D , Drain-to-Source Current (A)
BOTTOM
-I D , Drain-to-Source Current (A)
BOTTOM
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
1
1
-4.5V
-4.5V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
2 I D = -- .7A
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
2.0
1.5
1
1.0
0.5
0.1 4 5 6 7
V DS = -50V 20µs PULSE WIDTH 8 9 10
0.0 -60 -40 -20
V GS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature

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